Supply original IPI020N06NAKSA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 60V 29A TO262-3

RoHS
Datasheet
Supply original IPI020N06NAKSA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPI020N06NAKSA1

Internal code

TCE000078233

Package

TO262

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 60V 29A TO262-3

key Attributes

-

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Product overview

Overview

MOSFET N-CH 60V 29A TO262-3

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Mounting Type

Through Hole

Product Attribute

Published

2008

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Packaging

Bulk

Product Attribute

Lead Free

Contains Lead

Mounting Type
Through Hole
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Packaging
Bulk
Lead Free
Contains Lead
Factory Lead Time
12 Weeks
Part Status
Obsolete
Halogen Free
Halogen Free
Reach Compliance Code
not_compliant
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Continuous Drain Current (ID)
120A
Pulsed Drain Current-Max (IDM)
480A
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Pbfree Code
no
Mount
Through Hole
Number Of Pins
3
Terminal Position
SINGLE
Pin Count
3
Drain To Source Breakdown Voltage
60V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Number Of Terminations
3
Fall Time (Typ)
19 ns
Series
OptiMOS™
Avalanche Energy Rating (Eas)
420 mJ
HTS Code
8541.29.00.95
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation
214W
Drain Current-Max (Abs) (ID)
29A
Rds On (Max) @ Id, Vgs
2m Ω @ 100A, 10V
Drain-Source On Resistance-Max
0.002Ohm
Input Capacitance (Ciss) (Max) @ Vds
7800pF @ 30V
Power Dissipation-Max
3W Ta 214W Tc
Gate Charge (Qg) (Max) @ Vgs
106nC @ 10V
Vgs(Th) (Max) @ Id
2.8V @ 143μA
Current - Continuous Drain (Id) @ 25°C
29A Ta 120A Tc
Manufacturer'S Part No.
IPI020N06NAKSA1
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Turn On Delay Time
24 ns
Turn-Off Delay Time
51 ns
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
45ns
Max Dual Supply Voltage
60V

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What is IPI020N06NAKSA1?

IPI020N06NAKSA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPI020N06NAKSA1?

IPI020N06NAKSA1 is listed with package reference TO262. The current product description is MOSFET N-CH 60V 29A TO262-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 32603 units in stock and 32603 units available for IPI020N06NAKSA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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