Supply original IPB65R150CFDATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 650V 22.4A TO-263

RoHS
Datasheet
Supply original IPB65R150CFDATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPB65R150CFDATMA1

Internal code

TCE000078223

Package

TO-263

Key specifications

Serise

CoolMOS™

Min Quantity

1

Description

MOSFET N-CH 650V 22.4A TO-263

key Attributes

-

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Product overview

Overview

MOSFET N-CH 650V 22.4A TO-263

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Configuration

SINGLE WITH BUILT-IN DIODE

Product Parameter

Rise Time

7.6ns

Product Parameter

Max Dual Supply Voltage

650V

Terminal Finish
Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
7.6ns
Max Dual Supply Voltage
650V
Turn-Off Delay Time
52.8 ns
Turn On Delay Time
12.4 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Factory Lead Time
18 Weeks
Halogen Free
Halogen Free
Packaging
Cut Tape (CT)
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Max Junction Temperature (Tj)
150°C
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pulsed Drain Current-Max (IDM)
72A
Pbfree Code
no
Mount
Surface Mount
Terminal Position
SINGLE
Number Of Terminations
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On)
10V
Pin Count
4
Gate Charge (Qg) (Max) @ Vgs
86nC @ 10V
Height
4.7mm
Drain To Source Breakdown Voltage
650V
Fall Time (Typ)
5.6 ns
Series
CoolMOS™
Input Capacitance (Ciss) (Max) @ Vds
2340pF @ 100V
Vgs(Th) (Max) @ Id
4.5V @ 900μA
Current - Continuous Drain (Id) @ 25°C
22.4A Tc
Continuous Drain Current (ID)
22.4A
Power Dissipation-Max
195.3W Tc
Rds On (Max) @ Id, Vgs
150m Ω @ 9.3A, 10V
Power Dissipation
195.3W
Manufacturer'S Part No.
IPB65R150CFDATMA1

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IPB65R150CFDATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPB65R150CFDATMA1?

IPB65R150CFDATMA1 is listed with package reference TO-263. The current product description is MOSFET N-CH 650V 22.4A TO-263, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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