Supply original IPB60R280C6ATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 600V 13.8A TO263

RoHS
Datasheet
Supply original IPB60R280C6ATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPB60R280C6ATMA1

Internal code

TCE000078222

Package

TO263

Key specifications

Serise

CoolMOS™

Min Quantity

1

Description

MOSFET N-CH 600V 13.8A TO263

key Attributes

-

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Product overview

Overview

MOSFET N-CH 600V 13.8A TO263

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Detailed Specifications

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Product Attribute

Published

2008

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Contains Lead

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Packaging

Tape & Reel (TR)

Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Halogen Free
Halogen Free
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Part Status
Not For New Designs
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pbfree Code
no
Mount
Surface Mount
Number Of Pins
3
Terminal Position
SINGLE
Number Of Terminations
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On)
10V
Pin Count
4
Power Dissipation
104W
Fall Time (Typ)
12 ns
Pulsed Drain Current-Max (IDM)
40A
Gate Charge (Qg) (Max) @ Vgs
43nC @ 10V
Series
CoolMOS™
Drain-Source On Resistance-Max
0.28Ohm
Power Dissipation-Max
104W Tc
Rds On (Max) @ Id, Vgs
280m Ω @ 6.5A, 10V
Continuous Drain Current (ID)
13.8A
Vgs(Th) (Max) @ Id
3.5V @ 430μA
Avalanche Energy Rating (Eas)
284 mJ
Input Capacitance (Ciss) (Max) @ Vds
950pF @ 100V
Manufacturer'S Part No.
IPB60R280C6ATMA1
Current - Continuous Drain (Id) @ 25°C
13.8A Tc
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Turn On Delay Time
13 ns
Turn-Off Delay Time
100 ns
Number Of Elements
1
Rise Time
11ns
Configuration
SINGLE WITH BUILT-IN DIODE
Max Dual Supply Voltage
600V

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What is IPB60R280C6ATMA1?

IPB60R280C6ATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPB60R280C6ATMA1?

IPB60R280C6ATMA1 is listed with package reference TO263. The current product description is MOSFET N-CH 600V 13.8A TO263, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IPB60R280C6ATMA1 available in stock?

This page currently shows 71969 units in stock and 71969 units available for IPB60R280C6ATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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