Supply original IPB034N03LGATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 30V 80A TO-263-3

RoHS
Datasheet
Supply original IPB034N03LGATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPB034N03LGATMA1

Internal code

TCE000078220

Package

TO-263

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 30V 80A TO-263-3

key Attributes

-

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Product overview

Overview

MOSFET N-CH 30V 80A TO-263-3

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Detailed Specifications

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Product Attribute

Published

2008

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Contains Lead

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

13 Weeks

Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Factory Lead Time
13 Weeks
Packaging
Tape & Reel (TR)
Halogen Free
Halogen Free
Terminal Form
GULL WING
Qualification Status
Not Qualified
Part Status
Not For New Designs
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pulsed Drain Current-Max (IDM)
400A
Pbfree Code
no
Mount
Surface Mount
Number Of Pins
3
Terminal Position
SINGLE
Number Of Terminations
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Pin Count
4
Continuous Drain Current (ID)
80A
Current - Continuous Drain (Id) @ 25°C
80A Tc
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Series
OptiMOS™
Vgs(Th) (Max) @ Id
2.2V @ 250μA
Drain-Source On Resistance-Max
0.0047Ohm
Avalanche Energy Rating (Eas)
70 mJ
Gate Charge (Qg) (Max) @ Vgs
51nC @ 10V
Power Dissipation
94W
Power Dissipation-Max
94W Tc
Rds On (Max) @ Id, Vgs
3.4m Ω @ 30A, 10V
Fall Time (Typ)
5.4 ns
Input Capacitance (Ciss) (Max) @ Vds
5300pF @ 15V
Manufacturer'S Part No.
IPB034N03LGATMA1
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Number Of Elements
1
Turn-Off Delay Time
35 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Turn On Delay Time
9.2 ns
Max Dual Supply Voltage
30V
Rise Time
6.4ns

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What is IPB034N03LGATMA1?

IPB034N03LGATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPB034N03LGATMA1?

IPB034N03LGATMA1 is listed with package reference TO-263. The current product description is MOSFET N-CH 30V 80A TO-263-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IPB034N03LGATMA1 available in stock?

This page currently shows 77386 units in stock and 14298 units available for IPB034N03LGATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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