Supply original FQP55N10, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 100V 55A TO-220

RoHS
Datasheet
Supply original FQP55N10, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FQP55N10

Internal code

TCE000078074

Package

TO-220

Manufacturer

ON Semiconductor

Key specifications

Serise

QFET®

Min Quantity

1

Description

MOSFET N-CH 100V 55A TO-220

key Attributes

-

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Product overview

Overview

MOSFET N-CH 100V 55A TO-220

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

Mounting Type

Through Hole

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Packaging

Tube

Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
5 Weeks
Published
2000
Height
9.4mm
Element Configuration
Single
Manufacturer
ON Semiconductor
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
JEDEC-95 Code
TO-220AB
Package / Case
TO-220-3
Pulsed Drain Current-Max (IDM)
220A
Weight
1.8g
Series
QFET®
Contact Plating
Tin
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Number Of Pins
3
Fall Time (Typ)
140 ns
Number Of Terminations
3
Length
10.1mm
Width
4.7mm
Voltage - Rated DC
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Gate To Source Voltage (Vgs)
25V
Vgs (Max)
±25V
Drain To Source Breakdown Voltage
100V
Resistance
26MOhm
Current - Continuous Drain (Id) @ 25°C
55A Tc
Continuous Drain Current (ID)
55A
Current Rating
55A
Input Capacitance (Ciss) (Max) @ Vds
2730pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
98nC @ 10V
Rds On (Max) @ Id, Vgs
26m Ω @ 27.5A, 10V
Power Dissipation-Max
155W Tc
Manufacturer'S Part No.
FQP55N10
Power Dissipation
155W
Turn-Off Delay Time
110 ns
Number Of Elements
1
Turn On Delay Time
25 ns
Rise Time
250ns
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
Moisture Sensitivity Level (MSL)
Not Applicable

Common questions

Product FAQ

Quick answers for buyers reviewing FQP55N10, stock, documentation, and sourcing steps.

What is FQP55N10?

FQP55N10 is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FQP55N10?

FQP55N10 is listed with package reference TO-220. The current product description is MOSFET N-CH 100V 55A TO-220, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FQP55N10 available in stock?

This page currently shows 97778 units in stock and 35779 units available for FQP55N10. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for FQP55N10?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FQP55N10 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FQP55N10?

Yes. This page links to the datasheet for FQP55N10 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify FQP55N10 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FQP55N10 before approving the order.

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