Supply original FDT86256, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 150V 1.2A SOT-223-4

RoHS
Datasheet
Supply original FDT86256, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FDT86256

Internal code

TCE000078026

Package

SOT-223

Manufacturer

ON Semiconductor

Key specifications

Serise

PowerTrench®

Min Quantity

1

Description

MOSFET N-CH 150V 1.2A SOT-223-4

key Attributes

-

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Product overview

Overview

MOSFET N-CH 150V 1.2A SOT-223-4

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

8 Weeks

Product Attribute

Published

2011

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
8 Weeks
Published
2011
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
ON Semiconductor
Package / Case
TO-261-4, TO-261AA
Weight
188mg
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
Lifecycle Status
ACTIVE (Last Updated: 13 hours ago)
Series
PowerTrench®
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Gate To Source Voltage (Vgs)
20V
Height
1.7mm
Number Of Terminations
4
Width
3.7mm
Length
6.7mm
Drain Current-Max (Abs) (ID)
3A
Continuous Drain Current (ID)
1.2A
Power Dissipation
2.3W
Drain To Source Breakdown Voltage
150V
Fall Time (Typ)
2.6 ns
Pulsed Drain Current-Max (IDM)
2A
Gate Charge (Qg) (Max) @ Vgs
2nC @ 10V
Power Dissipation-Max
2.3W Ta 10W Tc
Input Capacitance (Ciss) (Max) @ Vds
73pF @ 75V
Current - Continuous Drain (Id) @ 25°C
1.2A Ta 3A Tc
Drain-Source On Resistance-Max
0.845Ohm
Rds On (Max) @ Id, Vgs
845m Ω @ 1.2A, 10V
Manufacturer'S Part No.
FDT86256
Terminal Finish
Tin (Sn)
Number Of Elements
1
Turn On Delay Time
2.7 ns
Rise Time
1.7ns
Turn-Off Delay Time
4.8 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
JESD-30 Code
R-PDSO-G4
ECCN Code
EAR99

Common questions

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What is FDT86256?

FDT86256 is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDT86256?

FDT86256 is listed with package reference SOT-223. The current product description is MOSFET N-CH 150V 1.2A SOT-223-4, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDT86256 available in stock?

This page currently shows 98627 units in stock and 51169 units available for FDT86256. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDT86256 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDT86256?

Yes. This page links to the datasheet for FDT86256 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDT86256 before approving the order.

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