Supply original FDC8602, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor

MOSFET 2N-CH 100V 1.2A 6-SSOT

RoHS
Datasheet
Supply original FDC8602, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor | TrustCompo

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Part Number

FDC8602

Internal code

TCE000078015

Package

SSOT

Manufacturer

ON Semiconductor

Key specifications

Serise

PowerTrench®

Min Quantity

1

Description

MOSFET 2N-CH 100V 1.2A 6-SSOT

key Attributes

-

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Product overview

Overview

MOSFET 2N-CH 100V 1.2A 6-SSOT

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

FET Technology

METAL-OXIDE SEMICONDUCTOR

Product Parameter

Number Of Elements

2

Product Parameter

Drain To Source Voltage (Vdss)

100V

Product Parameter

Turn On Delay Time

3.5 ns

Product Parameter

FET Feature

Standard

Terminal Finish
Tin (Sn)
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number Of Elements
2
Drain To Source Voltage (Vdss)
100V
Turn On Delay Time
3.5 ns
FET Feature
Standard
Rise Time
1.7ns
Turn-Off Delay Time
5.4 ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Packaging
Cut Tape (CT)
Terminal Form
GULL WING
Factory Lead Time
35 Weeks
Max Junction Temperature (Tj)
150°C
Manufacturer
ON Semiconductor
Height
1.1mm
Width
1.7mm
Package / Case
SOT-23-6 Thin, TSOT-23-6
Power Dissipation
690mW
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
Weight
36mg
Series
PowerTrench®
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Gate To Source Voltage (Vgs)
20V
Length
3mm
Element Configuration
Dual
Continuous Drain Current (ID)
1.2A
Drain To Source Breakdown Voltage
100V
Fall Time (Typ)
2.3 ns
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Feedback Cap-Max (Crss)
5 pF
Threshold Voltage
3.2V
Additional Feature
ULTRA-LOW RESISTANCE
FET Type
2 N-Channel (Dual)
JEDEC-95 Code
MO-193AA
Max Power Dissipation
690mW
Input Capacitance (Ciss) (Max) @ Vds
70pF @ 50V
Drain-Source On Resistance-Max
0.35Ohm
Rds On (Max) @ Id, Vgs
350m Ω @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs
2nC @ 10V
Manufacturer'S Part No.
FDC8602
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.21.0095
ECCN Code
EAR99

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What is FDC8602?

FDC8602 is a Transistors - FETs, MOSFETs - Arrays component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDC8602?

FDC8602 is listed with package reference SSOT. The current product description is MOSFET 2N-CH 100V 1.2A 6-SSOT, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDC8602 available in stock?

This page currently shows 91195 units in stock and 54461 units available for FDC8602. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDC8602 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDC8602?

Yes. This page links to the datasheet for FDC8602 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDC8602 before approving the order.

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