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SIR406DP-T1-GE3 Transistors - FETs, MOSFETs - Single by Vishay

SIR406DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single model from Vishay, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. MOSFET N-CH 25V 40A PPAK SO-8. TrustCompo combines the available model, brand, hierarchy, and specification details around SIR406DP-T1-GE3 so buyers can move faster from review to quotation.

RoHS
Datasheet
SIR406DP-T1-GE3 Transistors - FETs, MOSFETs - Single by Vishay | TrustCompo
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Documentation support

Pre-shipment inspection review

Part Number

SIR406DP-T1-GE3

Internal code

TCE000077450

Package

-

Manufacturer

Vishay

Key specifications

Series

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 25V 40A PPAK SO-8

key Attributes

-

Technical document

Open The Official Datasheet

Review the latest datasheet for SIR406DP-T1-GE3 from Vishay in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View SIR406DP-T1-GE3 Datasheet

Why request a quote

Use the RFQ step to confirm the commercial and documentation details buyers usually need before placing an order.

RoHS, REACH, and lead-free documentation can be confirmed during RFQ
Traceability and Certificate of Conformance support available on request
Pre-shipment inspection report support for quality review

Trust signals

Globally recognized certifications

4 certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Ordering workflow

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How to order this product

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1

Confirm part and quantity

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2

Send RFQ or sample request

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3

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Quality & Traceability Center

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Structured product content

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Product overview

Overview

MOSFET N-CH 25V 40A PPAK SO-8

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

JESD-30 Code

R-XDSO-C5

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
JESD-30 Code
R-XDSO-C5
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Published
2015
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Terminal Form
C BEND
Weight
506.605978mg
Series
TrenchFET®
Continuous Drain Current (ID)
40A
Power Dissipation
5W
Package / Case
PowerPAK® SO-8
Avalanche Energy Rating (Eas)
45 mJ
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Gate To Source Voltage (Vgs)
20V
Drain To Source Breakdown Voltage
25V
Fall Time (Typ)
10 ns
Pulsed Drain Current-Max (IDM)
70A
Gate Charge (Qg) (Max) @ Vgs
50nC @ 10V
Vgs(Th) (Max) @ Id
2.4V @ 250μA
Power Dissipation-Max
5W Ta 48W Tc
Drain Current-Max (Abs) (ID)
27A
Rds On (Max) @ Id, Vgs
3.8m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2083pF @ 10V
Manufacturer'S Part No.
SIR406DP-T1-GE3
Terminal Finish
MATTE TIN
Number Of Channels
1
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
20ns
Turn-Off Delay Time
28 ns
Turn On Delay Time
22 ns

Common questions

Product FAQ

Quick answers for buyers reviewing SIR406DP-T1-GE3, stock, documentation, and sourcing steps.

What is SIR406DP-T1-GE3?

SIR406DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIR406DP-T1-GE3?

SIR406DP-T1-GE3 is listed with package reference -. The current product description is MOSFET N-CH 25V 40A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIR406DP-T1-GE3 available in stock?

This page currently shows 134807 units in stock and 13920 units available for SIR406DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SIR406DP-T1-GE3?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIR406DP-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for SIR406DP-T1-GE3?

Yes. This page links to the datasheet for SIR406DP-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify SIR406DP-T1-GE3 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SIR406DP-T1-GE3 before approving the order.

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