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SIR802DP-T1-GE3 Transistors - FETs, MOSFETs - Single by Vishay
SIR802DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single model from Vishay, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to 2010 under the Vishay brand listing. MOSFET N-CH 20V 30A PPAK SO-8. TrustCompo combines the available model, brand, hierarchy, and specification details around SIR802DP-T1-GE3 so buyers can move faster from review to quotation.
RoHS
Datasheet
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Traceability and authenticity checks
Fast RFQ turnaround
Documentation support
Pre-shipment inspection review
Key specifications
Series
TrenchFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 20V 30A PPAK SO-8
key Attributes
-
Datasheet
View SIR802DP-T1-GE3 DatasheetTechnical document
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Why request a quote
Use the RFQ step to confirm the commercial and documentation details buyers usually need before placing an order.
RoHS, REACH, and lead-free documentation can be confirmed during RFQ
Traceability and Certificate of Conformance support available on request
Pre-shipment inspection report support for quality review
Trust signals
Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Ordering workflow
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1
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2
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3
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Product overview
Overview
MOSFET N-CH 20V 30A PPAK SO-8
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Popular Specs Surfaced First
Product Attribute
Lead Free
Lead Free
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Factory Lead Time
13 Weeks
Product Attribute
Packaging
Tape & Reel (TR)
Product Attribute
Part Status
Obsolete
Product Attribute
Published
2010
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
13 Weeks
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Published
2010
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Terminal Form
C BEND
Subcategory
FET General Purpose Powers
Vgs(Th) (Max) @ Id
1.5V @ 250μA
Weight
506.605978mg
Series
TrenchFET®
Package / Case
PowerPAK® SO-8
Radiation Hardening
No
Mount
Surface Mount
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Fall Time (Typ)
13 ns
Gate To Source Voltage (Vgs)
12V
Continuous Drain Current (ID)
30A
Current - Continuous Drain (Id) @ 25°C
30A Tc
Vgs (Max)
±12V
Pulsed Drain Current-Max (IDM)
70A
Drain To Source Breakdown Voltage
20V
Avalanche Energy Rating (Eas)
20 mJ
Drive Voltage (Max Rds On,Min Rds On)
2.5V 10V
Resistance
5MOhm
Threshold Voltage
600mV
Power Dissipation
4.6W
Rds On (Max) @ Id, Vgs
5m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1785pF @ 10V
Manufacturer'S Part No.
SIR802DP-T1-GE3
Power Dissipation-Max
4.6W Ta 27.7W Tc
JESD-609 Code
e3
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
JESD-30 Code
R-PDSO-C5
Terminal Finish
MATTE TIN
Turn On Delay Time
19 ns
Turn-Off Delay Time
36 ns
Number Of Channels
1
Number Of Elements
1
Time@Peak Reflow Temperature-Max (S)
40
Rise Time
14ns
Configuration
SINGLE WITH BUILT-IN DIODE
Common questions
Product FAQ
Quick answers for buyers reviewing SIR802DP-T1-GE3, stock, documentation, and sourcing steps.
What is SIR802DP-T1-GE3?
SIR802DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for SIR802DP-T1-GE3?
SIR802DP-T1-GE3 is listed with package reference 2010. The current product description is MOSFET N-CH 20V 30A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is SIR802DP-T1-GE3 available in stock?
This page currently shows 99374 units in stock and 47225 units available for SIR802DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for SIR802DP-T1-GE3?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIR802DP-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for SIR802DP-T1-GE3?
Yes. This page links to the datasheet for SIR802DP-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify SIR802DP-T1-GE3 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SIR802DP-T1-GE3 before approving the order.
Transistors - FETs, MOSFETs - Single
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