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BSS127S-7 Transistors - FETs, MOSFETs - Single by Diodes Incorporated

BSS127S-7 is a Transistors - FETs, MOSFETs - Single model from Diodes Incorporated, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT23 under the Diodes Incorporated brand listing. MOSFET N-CH 600V 0.05A SOT23. TrustCompo combines the available model, brand, hierarchy, and specification details around BSS127S-7 so buyers can move faster from review to quotation.

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Datasheet
BSS127S-7 Transistors - FETs, MOSFETs - Single by Diodes Incorporated | TrustCompo
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Part Number

BSS127S-7

Internal code

TCE000076541

Package

SOT23

Key specifications

Series

-

Min Quantity

1

Description

MOSFET N-CH 600V 0.05A SOT23

key Attributes

-

Technical document

Open The Official Datasheet

Review the latest datasheet for BSS127S-7 from Diodes Incorporated in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View BSS127S-7 Datasheet

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RoHS, REACH, and lead-free documentation can be confirmed during RFQ
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Globally recognized certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

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Product overview

Overview

The BSS127S-7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This component is designed for various applications, including switching and amplification in electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The BSS127S-7 is typically housed in a compact SOT-23 package, which is a surface-mount device (SMD) that allows for efficient use of PCB space and is suitable for automated assembly processes.
  3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a wide range of applications where moderate voltage handling is required.
  4. Current Rating: It can handle a continuous drain current (I_D) of up to 0.5A, which is adequate for many low to medium power applications.
  5. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which helps in minimizing power loss during operation and improving efficiency.
  6. Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically between 1V to 3V, allowing for effective switching at lower gate voltages.
  7. Switching Speed: The BSS127S-7 features fast switching capabilities, making it suitable for high-speed applications.
  8. Thermal Characteristics: The device has a thermal resistance (RθJA) that allows it to operate efficiently without overheating under normal conditions.

Applications:

The BSS127S-7 is commonly used in various applications, including:

  • Power Management: Used in DC-DC converters and power supply circuits.
  • Signal Switching: Ideal for switching applications in communication devices and consumer electronics.
  • Load Switching: Can be used to control loads in automotive and industrial applications.
  • Level Shifting: Useful in interfacing different voltage levels in mixed-signal systems.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): ±20V
  • Maximum Power Dissipation (P_D): Typically around 300mW, depending on the thermal management of the PCB.
  • Operating Temperature Range: The device can operate within a temperature range of -55°C to +150°C, making it suitable for various environmental conditions.

Conclusion:

The BSS127S-7 from Diodes Incorporated is a versatile and efficient N-channel MOSFET that is well-suited for a variety of electronic applications. Its compact size, low on-resistance, and good thermal performance make it a popular choice among engineers and designers looking for reliable switching solutions in their circuits.

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.21.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
5 ns
Rise Time
7.2ns
Turn-Off Delay Time
28.7 ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Published
2013
Element Configuration
Single
Height
1.1mm
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Manufacturer
Diodes Incorporated
Package / Case
TO-236-3, SC-59, SOT-23-3
Weight
7.994566mg
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Contact Plating
Tin
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Gate To Source Voltage (Vgs)
20V
Length
3mm
Number Of Terminations
3
Width
1.4mm
Power Dissipation
1.25W
Drain To Source Breakdown Voltage
600V
Vgs(Th) (Max) @ Id
4.5V @ 250μA
Power Dissipation-Max
610mW Ta
Rds On (Max) @ Id, Vgs
160 Ω @ 16mA, 10V
Fall Time (Typ)
168 ns
Current - Continuous Drain (Id) @ 25°C
50mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.08nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
21.8pF @ 25V
Manufacturer'S Part No.
BSS127S-7
Continuous Drain Current (ID)
70mA
Drain Current-Max (Abs) (ID)
0.07A

Common questions

Product FAQ

Quick answers for buyers reviewing BSS127S-7, stock, documentation, and sourcing steps.

What is BSS127S-7?

BSS127S-7 is a Transistors - FETs, MOSFETs - Single component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BSS127S-7?

BSS127S-7 is listed with package reference SOT23. The current product description is MOSFET N-CH 600V 0.05A SOT23, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is BSS127S-7 available in stock?

This page currently shows 168962 units in stock and 15636 units available for BSS127S-7. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for BSS127S-7?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for BSS127S-7 by Diodes Incorporated. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for BSS127S-7?

Yes. This page links to the datasheet for BSS127S-7 by Diodes Incorporated, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify BSS127S-7 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for BSS127S-7 before approving the order.

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