Supply original FDME1024NZT, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor

MOSFET 2N-CH 20V 3.8A 6-MICROFET

RoHS
Datasheet
Supply original FDME1024NZT, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor | TrustCompo

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Part Number

FDME1024NZT

Internal code

TCE000073903

Package

-

Manufacturer

ON Semiconductor

Key specifications

Serise

PowerTrench®

Min Quantity

1

Description

MOSFET 2N-CH 20V 3.8A 6-MICROFET

key Attributes

-

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4 certifications

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AS9120B

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ISO 14001

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ESD Control

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Product overview

Overview

MOSFET 2N-CH 20V 3.8A 6-MICROFET

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Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-609 Code

e4

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-609 Code
e4
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Turn-Off Delay Time
15 ns
FET Technology
METAL-OXIDE SEMICONDUCTOR
Drain To Source Voltage (Vdss)
20V
Number Of Elements
2
Turn On Delay Time
4.5 ns
FET Feature
Logic Level Gate
Rise Time
2ns
Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Packaging
Tape & Reel (TR)
Manufacturer
ON Semiconductor
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Vgs(Th) (Max) @ Id
1V @ 250μA
Series
PowerTrench®
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Width
1.6mm
Number Of Terminations
6
Number Of Pins
6
Gate To Source Voltage (Vgs)
8V
Element Configuration
Dual
Max Power Dissipation
1.4W
Length
1.6mm
Power Dissipation
1.3W
Fall Time (Typ)
1.7 ns
Height
500μm
Additional Feature
ESD PROTECTION
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Continuous Drain Current (ID)
3.8A
Drain To Source Breakdown Voltage
20V
Threshold Voltage
700mV
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 10V
FET Type
2 N-Channel (Dual)
Drain Current-Max (Abs) (ID)
3.4A
Feedback Cap-Max (Crss)
40 pF
Package / Case
6-UFDFN Exposed Pad
Weight
25.2mg
Gate Charge (Qg) (Max) @ Vgs
4.2nC @ 4.5V
Power - Max
600mW
Rds On (Max) @ Id, Vgs
66m Ω @ 3.4A, 4.5V
Manufacturer'S Part No.
FDME1024NZT

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What is FDME1024NZT?

FDME1024NZT is a Transistors - FETs, MOSFETs - Arrays component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDME1024NZT?

FDME1024NZT is listed with package reference -. The current product description is MOSFET 2N-CH 20V 3.8A 6-MICROFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDME1024NZT available in stock?

This page currently shows 47600 units in stock and 42267 units available for FDME1024NZT. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for FDME1024NZT?

Yes. This page links to the datasheet for FDME1024NZT by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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