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SI2325DS-T1-GE3 Transistors - FETs, MOSFETs - Single by Vishay
SI2325DS-T1-GE3 is a Transistors - FETs, MOSFETs - Single model from Vishay, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT-23 under the Vishay brand listing. MOSFET P-CH 150V 0.53A SOT-23. TrustCompo combines the available model, brand, hierarchy, and specification details around SI2325DS-T1-GE3 so buyers can move faster from review to quotation.
RoHS
Datasheet
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Fast RFQ turnaround
Documentation support
Pre-shipment inspection review
Key specifications
Series
TrenchFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 150V 0.53A SOT-23
key Attributes
-
Datasheet
View SI2325DS-T1-GE3 DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The SI2325DS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for high-efficiency switching applications and is particularly suitable for power management in various electronic devices.
Key Features:
- Type: N-channel MOSFET
- Package: The device is typically housed in a compact SO-8 (Small Outline 8-lead) package, which allows for efficient space utilization on printed circuit boards (PCBs).
- Voltage Rating: The SI2325DS-T1-GE3 has a maximum drain-source voltage (V_DS) rating of 25V, making it suitable for low-voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of up to 30A, depending on the thermal conditions and PCB layout, which allows it to manage significant power loads.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing overall efficiency.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 3V, which allows for easy drive with low-voltage control signals.
- Switching Speed: The device features fast switching capabilities, making it ideal for applications requiring rapid on/off control, such as in DC-DC converters and motor drivers.
- Thermal Resistance: The thermal resistance from junction to ambient (RθJA) is designed to ensure effective heat dissipation, which is critical for maintaining performance and reliability in high-power applications.
Applications:
The SI2325DS-T1-GE3 is commonly used in various applications, including:
- Power Management: Ideal for DC-DC converters, battery management systems, and power supply circuits.
- Load Switching: Suitable for switching loads in consumer electronics, automotive applications, and industrial equipment.
- Motor Control: Can be utilized in driving motors in robotics and automation systems.
Environmental Considerations:
The SI2325DS-T1-GE3 is compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring that it is free from harmful substances and environmentally friendly.
Conclusion:
Overall, the SI2325DS-T1-GE3 from Vishay is a versatile and efficient N-channel MOSFET that offers excellent performance in a variety of electronic applications. Its combination of low on-resistance, high current handling capability, and compact packaging makes it a popular choice among engineers and designers looking for reliable power management solutions.
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Popular Specs Surfaced First
Export Classifications & Environmental
JESD-609 Code
e3
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
HTSUS
8541.21.0095
Export Classifications & Environmental
ECCN Code
EAR99
Product Attribute
Part Status
Active
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.21.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Qualification Status
Not Qualified
Published
2016
Element Configuration
Single
Manufacturer
Vishay
Power Dissipation
750mW
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Package / Case
TO-236-3, SC-59, SOT-23-3
Series
TrenchFET®
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Width
1.4mm
Length
3.04mm
Drain To Source Breakdown Voltage
-150V
Weight
1.437803g
Height
1.02mm
Power Dissipation-Max
750mW Ta
Input Capacitance (Ciss) (Max) @ Vds
510pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Vgs(Th) (Max) @ Id
4.5V @ 250μA
Threshold Voltage
-4.5V
Current - Continuous Drain (Id) @ 25°C
530mA Ta
Rds On (Max) @ Id, Vgs
1.2 Ω @ 500mA, 10V
Continuous Drain Current (ID)
-690mA
Manufacturer'S Part No.
SI2325DS-T1-GE3
Nominal Vgs
-4.5 V
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
150V
Common questions
Product FAQ
Quick answers for buyers reviewing SI2325DS-T1-GE3, stock, documentation, and sourcing steps.
What is SI2325DS-T1-GE3?
SI2325DS-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for SI2325DS-T1-GE3?
SI2325DS-T1-GE3 is listed with package reference SOT-23. The current product description is MOSFET P-CH 150V 0.53A SOT-23, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is SI2325DS-T1-GE3 available in stock?
This page currently shows 155323 units in stock and 92295 units available for SI2325DS-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for SI2325DS-T1-GE3?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SI2325DS-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for SI2325DS-T1-GE3?
Yes. This page links to the datasheet for SI2325DS-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify SI2325DS-T1-GE3 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SI2325DS-T1-GE3 before approving the order.
Transistors - FETs, MOSFETs - Single
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