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NTD24N06LT4G Transistors - FETs, MOSFETs - Single by ON Semiconductor

NTD24N06LT4G is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-252-3 under the ON Semiconductor brand listing. MOSFET N-CH 60V 24A DPAK. TrustCompo combines the available model, brand, hierarchy, and specification details around NTD24N06LT4G so buyers can move faster from review to quotation.

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NTD24N06LT4G Transistors - FETs, MOSFETs - Single by ON Semiconductor | TrustCompo
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Part Number

NTD24N06LT4G

Internal code

TCE000071232

Package

TO-252-3

Manufacturer

ON Semiconductor

Key specifications

Series

-

Min Quantity

1

Description

MOSFET N-CH 60V 24A DPAK

key Attributes

-

Technical document

Open The Official Datasheet

Review the latest datasheet for NTD24N06LT4G from ON Semiconductor in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View NTD24N06LT4G Datasheet

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Globally recognized certifications

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ISO 9001

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AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

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Product overview

Overview

The NTD24N06LT4G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency switching applications and is particularly suitable for power management in various electronic devices.

Key Features:

  1. Type: N-channel MOSFET
  2. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 60V, making it suitable for applications that require moderate voltage handling.
  3. Current Rating: It can handle a continuous drain current (I_D) of up to 24A, which allows it to manage significant power loads effectively.
  4. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.
  5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V to 4V, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with low-voltage control signals.
  6. Package Type: The NTD24N06LT4G is available in a TO-220 package, which provides good thermal performance and ease of mounting on heat sinks for effective heat dissipation.
  7. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, allowing for efficient heat transfer and management during operation.
  8. Switching Speed: The device is designed for fast switching applications, making it suitable for use in power supplies, motor drivers, and other high-frequency applications.

Applications:

  • Power Management: Ideal for DC-DC converters and power supplies where efficient switching is crucial.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Lighting Control: Can be used in LED drivers and lighting control circuits due to its ability to handle high currents.
  • Consumer Electronics: Commonly found in devices requiring efficient power switching, such as computers and home appliances.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): ±20V, which defines the safe operating limits for the gate voltage.
  • Body Diode Characteristics: The NTD24N06LT4G features an intrinsic body diode, which allows for reverse current flow and can be beneficial in certain applications.

Conclusion:

The NTD24N06LT4G from ON Semiconductor is a robust and efficient N-channel MOSFET that is well-suited for a variety of power management and switching applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers and designers in the electronics industry.

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Product Attribute

Part Status

Active

JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
1 (Unlimited)
JESD-30 Code
R-PSSO-G2
Part Status
Active
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Lead Free
Lead Free
Factory Lead Time
9 Weeks
Mounting Type
Surface Mount
Published
2005
Packaging
Tape & Reel (TR)
Terminal Form
GULL WING
Current Rating
24A
Element Configuration
Single
Manufacturer
ON Semiconductor
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Pulsed Drain Current-Max (IDM)
72A
Vgs(Th) (Max) @ Id
2V @ 250μA
Length
6.73mm
Surface Mount
YES
Radiation Hardening
No
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Pin Count
3
Drain To Source Breakdown Voltage
60V
Height
2.38mm
Gate To Source Voltage (Vgs)
15V
Additional Feature
LOGIC LEVEL COMPATIBLE
Vgs (Max)
±15V
Voltage - Rated DC
60V
Nominal Vgs
1.7 V
Continuous Drain Current (ID)
24A
Power Dissipation
62.5W
Drive Voltage (Max Rds On,Min Rds On)
5V
Resistance
36mOhm
Fall Time (Typ)
52 ns
Gate Charge (Qg) (Max) @ Vgs
32nC @ 5V
Current - Continuous Drain (Id) @ 25°C
24A Ta
Power Dissipation-Max
1.36W Ta 62.5W Tj
Rds On (Max) @ Id, Vgs
45m Ω @ 10A, 5V
Input Capacitance (Ciss) (Max) @ Vds
1140pF @ 25V
Manufacturer'S Part No.
NTD24N06LT4G
Terminal Finish
Tin (Sn)
Number Of Elements
1
Turn On Delay Time
9.4 ns
Turn-Off Delay Time
23 ns
Rise Time
97ns

Common questions

Product FAQ

Quick answers for buyers reviewing NTD24N06LT4G, stock, documentation, and sourcing steps.

What is NTD24N06LT4G?

NTD24N06LT4G is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NTD24N06LT4G?

NTD24N06LT4G is listed with package reference TO-252-3. The current product description is MOSFET N-CH 60V 24A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is NTD24N06LT4G available in stock?

This page currently shows 81111 units in stock and 68936 units available for NTD24N06LT4G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for NTD24N06LT4G?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for NTD24N06LT4G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for NTD24N06LT4G?

Yes. This page links to the datasheet for NTD24N06LT4G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify NTD24N06LT4G before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for NTD24N06LT4G before approving the order.

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