Supply original SIA811ADJ-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET P-CH 20V 4.5A PPAK SC70-6

RoHS
Datasheet
Supply original SIA811ADJ-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SIA811ADJ-T1-GE3

Internal code

TCE000070089

Package

SC70-6

Manufacturer

Vishay

Key specifications

Serise

LITTLE FOOT®

Min Quantity

1

Description

MOSFET P-CH 20V 4.5A PPAK SC70-6

key Attributes

-

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Overview

MOSFET P-CH 20V 4.5A PPAK SC70-6

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Product Attribute

Part Status

Active

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
ECCN
EAR99
REACH Status
Vendor Undefined
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Published
2016
Height
750μm
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Power Dissipation
1.8W
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Vgs(Th) (Max) @ Id
1V @ 250μA
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Vgs (Max)
±8V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Gate To Source Voltage (Vgs)
8V
Drain To Source Breakdown Voltage
-20V
Weight
28.009329mg
Fall Time (Typ)
10 ns
Width
2.05mm
Length
2.05mm
Continuous Drain Current (ID)
3.2A
Current - Continuous Drain (Id) @ 25°C
4.5A Tc
Series
LITTLE FOOT®
Drain Current-Max (Abs) (ID)
4.5A
Package / Case
PowerPAK® SC-70-6 Dual
Gate Charge (Qg) (Max) @ Vgs
13nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
345pF @ 10V
Rds On (Max) @ Id, Vgs
116m Ω @ 2.8A, 4.5V
Manufacturer'S Part No.
SIA811ADJ-T1-GE3
Power Dissipation-Max
1.8W Ta 6.5W Tc
Turn-Off Delay Time
20 ns
Terminal Finish
MATTE TIN
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
20V
Turn On Delay Time
15 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
45ns
FET Feature
Schottky Diode (Isolated)

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What is SIA811ADJ-T1-GE3?

SIA811ADJ-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIA811ADJ-T1-GE3?

SIA811ADJ-T1-GE3 is listed with package reference SC70-6. The current product description is MOSFET P-CH 20V 4.5A PPAK SC70-6, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 76090 units in stock and 62125 units available for SIA811ADJ-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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