Supply original IRF1010EZPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 60V 75A TO-220AB

RoHS
Datasheet
Supply original IRF1010EZPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF1010EZPBF

Internal code

TCE000069956

Package

TO-

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 60V 75A TO-220AB

key Attributes

-

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4 certifications

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CoC Available on Request

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Product overview

Overview

MOSFET N-CH 60V 75A TO-220AB

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Detailed Specifications

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Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Product Attribute

Part Status

Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Packaging
Tube
Factory Lead Time
12 Weeks
Published
2004
Element Configuration
Single
Lead Free
Contains Lead, Lead Free
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
JEDEC-95 Code
TO-220AB
Package / Case
TO-220-3
Power Dissipation-Max
140W Tc
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
Radiation Hardening
No
Mount
Through Hole
Number Of Pins
3
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Resistance
8.5MOhm
Number Of Terminations
3
Drive Voltage (Max Rds On,Min Rds On)
10V
Voltage - Rated DC
60V
Gate Charge (Qg) (Max) @ Vgs
86nC @ 10V
Threshold Voltage
4V
Power Dissipation
140W
Length
10.668mm
Width
4.826mm
Height
9.017mm
Continuous Drain Current (ID)
75A
Current - Continuous Drain (Id) @ 25°C
75A Tc
Current Rating
75A
Vgs(Th) (Max) @ Id
4V @ 100μA
Fall Time (Typ)
54 ns
Rds On (Max) @ Id, Vgs
8.5m Ω @ 51A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2810pF @ 25V
Manufacturer'S Part No.
IRF1010EZPBF
Avalanche Energy Rating (Eas)
99 mJ
Turn On Delay Time
19 ns
Number Of Elements
1
Dual Supply Voltage
60V
Rise Time
90ns
Turn-Off Delay Time
38 ns

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What is IRF1010EZPBF?

IRF1010EZPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF1010EZPBF?

IRF1010EZPBF is listed with package reference TO-. The current product description is MOSFET N-CH 60V 75A TO-220AB, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF1010EZPBF available in stock?

This page currently shows 57375 units in stock and 57375 units available for IRF1010EZPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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