Supply original IPB45P03P4L11ATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET P-CH TO263-3

RoHS
Datasheet
Supply original IPB45P03P4L11ATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPB45P03P4L11ATMA1

Internal code

TCE000069939

Package

TO263

Key specifications

Serise

Automotive, AEC-Q101, OptiMOS™

Min Quantity

1

Description

MOSFET P-CH TO263-3

key Attributes

-

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Product overview

Overview

MOSFET P-CH TO263-3

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Detailed Specifications

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Product Attribute

Published

2008

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Contains Lead

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

14 Weeks

Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Length
10mm
Halogen Free
Halogen Free
Terminal Form
GULL WING
Element Configuration
Single
Part Status
Not For New Designs
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
FET Type
P-Channel
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reflow Temperature-Max (S)
NOT SPECIFIED
Additional Feature
LOGIC LEVEL COMPATIBLE
Drain To Source Breakdown Voltage
-30V
Fall Time (Typ)
14 ns
Height
4.4mm
Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V
Current - Continuous Drain (Id) @ 25°C
45A Tc
Gate To Source Voltage (Vgs)
5V
Pulsed Drain Current-Max (IDM)
180A
Width
9.25mm
Power Dissipation
58W
Power Dissipation-Max
58W Tc
Series
Automotive, AEC-Q101, OptiMOS™
Avalanche Energy Rating (Eas)
110 mJ
Drain-Source On Resistance-Max
0.0111Ohm
Continuous Drain Current (ID)
-45A
Manufacturer'S Part No.
IPB45P03P4L11ATMA1
Input Capacitance (Ciss) (Max) @ Vds
3770pF @ 25V
Vgs (Max)
+5V, -16V
Vgs(Th) (Max) @ Id
2V @ 85μA
Rds On (Max) @ Id, Vgs
10.8m Ω @ 45A, 10V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Turn-Off Delay Time
45 ns
Number Of Elements
1
Drain To Source Voltage (Vdss)
30V
Turn On Delay Time
7 ns
Rise Time
3ns
Max Dual Supply Voltage
-30V

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What is IPB45P03P4L11ATMA1?

IPB45P03P4L11ATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPB45P03P4L11ATMA1?

IPB45P03P4L11ATMA1 is listed with package reference TO263. The current product description is MOSFET P-CH TO263-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IPB45P03P4L11ATMA1 available in stock?

This page currently shows 22567 units in stock and 18582 units available for IPB45P03P4L11ATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IPB45P03P4L11ATMA1 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

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