Supply original FQPF9N25C, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 250V 8.8A TO-220F

RoHS
Datasheet
Supply original FQPF9N25C, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FQPF9N25C

Internal code

TCE000069844

Package

TO-

Manufacturer

ON Semiconductor

Key specifications

Serise

QFET®

Min Quantity

1

Description

MOSFET N-CH 250V 8.8A TO-220F

key Attributes

-

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Product overview

Overview

MOSFET N-CH 250V 8.8A TO-220F

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

Mounting Type

Through Hole

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Length

10.16mm

Product Attribute

Lead Free

Lead Free

Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Length
10.16mm
Lead Free
Lead Free
Packaging
Tube
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Published
2004
Factory Lead Time
5 Weeks
Height
9.19mm
Element Configuration
Single
Manufacturer
ON Semiconductor
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
JEDEC-95 Code
TO-220AB
Series
QFET®
Vgs (Max)
±30V
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Number Of Pins
3
Number Of Terminations
3
Width
4.7mm
Voltage - Rated DC
250V
Drive Voltage (Max Rds On,Min Rds On)
10V
Case Connection
ISOLATED
Gate To Source Voltage (Vgs)
30V
Power Dissipation
38W
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Power Dissipation-Max
38W Tc
Weight
2.27g
Drain To Source Breakdown Voltage
250V
Package / Case
TO-220-3 Full Pack
Fall Time (Typ)
65 ns
Input Capacitance (Ciss) (Max) @ Vds
710pF @ 25V
Continuous Drain Current (ID)
8.8A
Resistance
430mOhm
Current - Continuous Drain (Id) @ 25°C
8.8A Tc
Avalanche Energy Rating (Eas)
285 mJ
Manufacturer'S Part No.
FQPF9N25C
Rds On (Max) @ Id, Vgs
430m Ω @ 4.4A, 10V
Current Rating
8.8A
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
Moisture Sensitivity Level (MSL)
Not Applicable
Turn-Off Delay Time
90 ns
Terminal Finish
Tin (Sn)
Number Of Elements
1
Turn On Delay Time
15 ns
Rise Time
85ns

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What is FQPF9N25C?

FQPF9N25C is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FQPF9N25C?

FQPF9N25C is listed with package reference TO-. The current product description is MOSFET N-CH 250V 8.8A TO-220F, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FQPF9N25C available in stock?

This page currently shows 95978 units in stock and 15543 units available for FQPF9N25C. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FQPF9N25C by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FQPF9N25C?

Yes. This page links to the datasheet for FQPF9N25C by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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