What is DMN65D8LDW-7?
DMN65D8LDW-7 is a Transistors - FETs, MOSFETs - Arrays component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
Supply original DMN65D8LDW-7, Transistors - FETs, MOSFETs - Arrays, by Diodes Incorporated
MOSFET 2N-CH 60V 0.18A SOT363
RoHS
Datasheet
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Key specifications
Serise
-
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Categroy
Transistors - FETs, MOSFETs - ArraysDescription
MOSFET 2N-CH 60V 0.18A SOT363
key Attributes
-
Technical document
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ISO 9001
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AS9120B
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ISO 14001
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ESD Control
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Authenticity Verification
CoC Available on Request
Pre-Shipment Inspection
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Product overview
Overview
The DMN65D8LDW-7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This component is designed for use in various electronic applications, particularly in power management and switching applications due to its efficient performance and reliability.
Key Features:
- Type: N-channel MOSFET
- Voltage Rating: The DMN65D8LDW-7 has a maximum drain-source voltage (V_DS) of 65V, making it suitable for medium-voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of up to 8A, which allows it to manage significant power loads.
- R_DS(on): The on-resistance (R_DS(on)) is typically low, around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 3V, which allows for easy interfacing with low-voltage control signals.
- Package Type: The DMN65D8LDW-7 is housed in a compact SO-8 package, which is suitable for surface mount technology (SMT). This package design helps save space on printed circuit boards (PCBs) and facilitates efficient thermal management.
- Thermal Resistance: The device has a low thermal resistance, which aids in heat dissipation during operation, ensuring reliability and longevity.
- Applications: Common applications include power management circuits, DC-DC converters, motor drivers, and other switching applications where efficient power handling is crucial.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): Typically around 1.5W, depending on the thermal conditions.
- Operating Temperature Range: The device can operate in a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.
Benefits:
- High Efficiency: The low on-resistance and high current rating contribute to the overall efficiency of power circuits.
- Compact Size: The SO-8 package allows for space-saving designs in modern electronics.
- Versatility: Suitable for a wide range of applications, from consumer electronics to industrial systems.
In summary, the DMN65D8LDW-7 from Diodes Incorporated is a robust and efficient N-channel MOSFET that is well-suited for various power management and switching applications, offering a combination of high performance, reliability, and compact design.
Full technical breakdown
Detailed Specifications
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Lead Free
Lead Free
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Factory Lead Time
15 Weeks
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
15 Weeks
Packaging
Tape & Reel (TR)
Length
2.2mm
Width
1.35mm
Package / Case
6-TSSOP, SC-88, SOT-363
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Published
2013
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Operating Mode
ENHANCEMENT MODE
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Vgs(Th) (Max) @ Id
2V @ 250μA
Manufacturer
Diodes Incorporated
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Powers
Contact Plating
Tin
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Max Power Dissipation
300mW
Power Dissipation
300mW
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Weight
6.010099mg
Resistance
6Ohm
Fall Time (Typ)
6.3 ns
Continuous Drain Current (ID)
180mA
Drain Current-Max (Abs) (ID)
0.15A
FET Type
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs
0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 25V
Manufacturer'S Part No.
DMN65D8LDW-7
Base Part Number
DMN65D8LDW
Rds On (Max) @ Id, Vgs
6 Ω @ 115mA, 10V
Turn-Off Delay Time
12 ns
FET Technology
METAL-OXIDE SEMICONDUCTOR
Drain To Source Voltage (Vdss)
60V
Number Of Elements
2
FET Feature
Logic Level Gate
Turn On Delay Time
3.3 ns
Rise Time
3.2ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing DMN65D8LDW-7, stock, documentation, and sourcing steps.
What package and description are listed for DMN65D8LDW-7?
DMN65D8LDW-7 is listed with package reference SOT363. The current product description is MOSFET 2N-CH 60V 0.18A SOT363, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is DMN65D8LDW-7 available in stock?
This page currently shows 25658 units in stock and 11206 units available for DMN65D8LDW-7. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for DMN65D8LDW-7?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for DMN65D8LDW-7 by Diodes Incorporated. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for DMN65D8LDW-7?
Yes. This page links to the datasheet for DMN65D8LDW-7 by Diodes Incorporated, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify DMN65D8LDW-7 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for DMN65D8LDW-7 before approving the order.
Transistors - FETs, MOSFETs - Arrays
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