Supply original DMN6066SSD-13, Transistors - FETs, MOSFETs - Arrays, by Diodes Incorporated

MOSFET 2N-CH 60V 3.3A 8SO

RoHS
Datasheet
Supply original DMN6066SSD-13, Transistors - FETs, MOSFETs - Arrays, by Diodes Incorporated | TrustCompo

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Part Number

DMN6066SSD-13

Internal code

TCE000069470

Package

SOIC

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET 2N-CH 60V 3.3A 8SO

key Attributes

-

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Product overview

Overview

The DMN6066SSD-13 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This component is designed for high-efficiency switching applications and is particularly suitable for power management in various electronic devices.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The DMN6066SSD-13 is typically housed in a compact SO-8 (Small Outline 8-lead) package, which allows for efficient space utilization on printed circuit boards (PCBs).
  3. Voltage Rating: It has a maximum drain-source voltage (V_DS) of around 60V, making it suitable for a wide range of applications, including power supplies and motor control.
  4. Current Rating: The device can handle a continuous drain current (I_D) of approximately 30A, which allows it to manage significant power loads effectively.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved thermal performance during operation.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 3V, allowing for easy drive with low-voltage control signals.
  7. Switching Speed: The DMN6066SSD-13 features fast switching capabilities, making it ideal for high-frequency applications.
  8. Thermal Characteristics: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) of 150°C, which enhances its reliability in demanding environments.

Applications:

The DMN6066SSD-13 is widely used in various applications, including:

  • Power Management: Ideal for DC-DC converters, battery management systems, and power supply circuits.
  • Motor Control: Suitable for driving motors in automotive and industrial applications.
  • Load Switching: Can be used for switching loads in consumer electronics and appliances.
  • LED Drivers: Effective in controlling LED lighting systems due to its efficient switching characteristics.

Conclusion:

The DMN6066SSD-13 from Diodes Incorporated is a versatile and efficient N-channel MOSFET that offers excellent performance for a variety of power management and switching applications. Its low on-resistance, high current handling capability, and compact package make it a popular choice among engineers and designers looking for reliable and efficient solutions in their electronic designs.

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Matte Tin (Sn)

Product Parameter

FET Technology

METAL-OXIDE SEMICONDUCTOR

Product Parameter

Drain To Source Voltage (Vdss)

60V

Product Parameter

Number Of Elements

2

Product Parameter

Turn On Delay Time

2.7 ns

Product Parameter

FET Feature

Logic Level Gate

Terminal Finish
Matte Tin (Sn)
FET Technology
METAL-OXIDE SEMICONDUCTOR
Drain To Source Voltage (Vdss)
60V
Number Of Elements
2
Turn On Delay Time
2.7 ns
FET Feature
Logic Level Gate
Turn-Off Delay Time
14.7 ns
Rise Time
2.4ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Factory Lead Time
17 Weeks
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Package / Case
8-SOIC (0.154, 3.90mm Width)
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Published
2017
Operating Temperature
-55°C~150°C TJ
Manufacturer
Diodes Incorporated
Additional Feature
HIGH RELIABILITY
Vgs(Th) (Max) @ Id
3V @ 250μA
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Width
4mm
Height
1.5mm
Mount
Surface Mount
Pbfree Code
yes
Length
5mm
Number Of Pins
8
Number Of Terminations
8
Pin Count
8
Gate To Source Voltage (Vgs)
20V
Element Configuration
Dual
Max Power Dissipation
1.8W
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
FET Type
2 N-Channel (Dual)
Weight
73.992255mg
Continuous Drain Current (ID)
3.3A
Resistance
66mOhm
Drain Current-Max (Abs) (ID)
4.4A
DS Breakdown Voltage-Min
60V
Power Dissipation
2.14W
Fall Time (Typ)
5.4 ns
Gate Charge (Qg) (Max) @ Vgs
10.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
502pF @ 30V
Manufacturer'S Part No.
DMN6066SSD-13
Base Part Number
DMN6066SSD
Rds On (Max) @ Id, Vgs
66m Ω @ 4.5A, 10V

Common questions

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What is DMN6066SSD-13?

DMN6066SSD-13 is a Transistors - FETs, MOSFETs - Arrays component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DMN6066SSD-13?

DMN6066SSD-13 is listed with package reference SOIC. The current product description is MOSFET 2N-CH 60V 3.3A 8SO, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is DMN6066SSD-13 available in stock?

This page currently shows 31886 units in stock and 10616 units available for DMN6066SSD-13. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for DMN6066SSD-13?

Yes. This page links to the datasheet for DMN6066SSD-13 by Diodes Incorporated, so engineers and buyers can review package, ratings, and application details before purchase.

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