What is SIR876ADP-T1-GE3?
SIR876ADP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
Supply original SIR876ADP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay
MOSFET N-CH 100V 40A PPAK SO-8
RoHS
Datasheet
Pictures are for reference only. Please contact us for the latest pictures.
Key specifications
Serise
TrenchFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Categroy
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 100V 40A PPAK SO-8
key Attributes
-
Technical document
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Authenticity Verification
CoC Available on Request
Pre-Shipment Inspection
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Product overview
Overview
The SIR876ADP-T1-GE3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay, designed for a variety of applications including power management, switching, and amplification.
Key Features:
- Type: N-channel MOSFET
- Package: The device is typically housed in a TO-220 package, which provides excellent thermal performance and allows for easy mounting on heatsinks.
- Voltage Rating: The SIR876ADP-T1-GE3 has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of up to 60A, depending on the thermal conditions and the PCB layout.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 8.5 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation and enhances efficiency.
- Gate Threshold Voltage (V_GS(th)): The threshold voltage is in the range of 1V to 2.5V, allowing for easy drive with standard logic levels.
- Switching Speed: The device features fast switching capabilities, making it suitable for high-frequency applications.
- Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in effective heat dissipation during operation.
Applications:
- Power Supply Circuits: Ideal for use in DC-DC converters, power management systems, and battery management systems.
- Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
- Lighting Control: Can be used in LED drivers and lighting control systems due to its efficient switching characteristics.
- Consumer Electronics: Commonly found in devices requiring efficient power switching and management.
Reliability and Compliance:
The SIR876ADP-T1-GE3 is designed to meet stringent reliability standards and is compliant with RoHS (Restriction of Hazardous Substances) regulations, making it an environmentally friendly choice for modern electronic designs.
Conclusion:
Overall, the SIR876ADP-T1-GE3 from Vishay is a robust and efficient N-channel MOSFET that offers excellent performance for a wide range of applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize power efficiency in their designs.
Full technical breakdown
Detailed Specifications
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Popular Specs Surfaced First
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
HTSUS
8541.29.0095
Export Classifications & Environmental
ECCN Code
EAR99
Export Classifications & Environmental
JESD-30 Code
R-PDSO-C5
Product Attribute
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-C5
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2014
Terminal Position
DUAL
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Terminal Form
C BEND
Weight
506.605978mg
Series
TrenchFET®
Power Dissipation
5W
Package / Case
PowerPAK® SO-8
Radiation Hardening
No
Mount
Surface Mount
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Gate To Source Voltage (Vgs)
20V
Threshold Voltage
1.5V
Fall Time (Typ)
16 ns
Drain To Source Breakdown Voltage
100V
Resistance
14.5MOhm
Manufacturer Package Identifier
S17-0173-Single
Height
1.17mm
Gate Charge (Qg) (Max) @ Vgs
49nC @ 10V
Drain Current-Max (Abs) (ID)
40A
Continuous Drain Current (ID)
15.2A
Vgs(Th) (Max) @ Id
2.8V @ 250μA
Manufacturer'S Part No.
SIR876ADP-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds
1630pF @ 50V
Rds On (Max) @ Id, Vgs
10.8m Ω @ 20A, 10V
Power Dissipation-Max
5W Ta 62.5W Tc
Turn On Delay Time
11 ns
Number Of Channels
1
Number Of Elements
1
Rise Time
16ns
Turn-Off Delay Time
28 ns
Common questions
Product FAQ
Quick answers for buyers reviewing SIR876ADP-T1-GE3, stock, documentation, and sourcing steps.
What package and description are listed for SIR876ADP-T1-GE3?
SIR876ADP-T1-GE3 is listed with package reference -. The current product description is MOSFET N-CH 100V 40A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is SIR876ADP-T1-GE3 available in stock?
This page currently shows 38153 units in stock and 12732 units available for SIR876ADP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for SIR876ADP-T1-GE3?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIR876ADP-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for SIR876ADP-T1-GE3?
Yes. This page links to the datasheet for SIR876ADP-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify SIR876ADP-T1-GE3 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SIR876ADP-T1-GE3 before approving the order.
Transistors - FETs, MOSFETs - Single
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