Supply original BSC079N10NSGATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 100V 100A TDSON-8

RoHS
Datasheet
Supply original BSC079N10NSGATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

BSC079N10NSGATMA1

Internal code

TCE000068805

Package

-

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 100V 100A TDSON-8

key Attributes

-

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Technical document

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Globally recognized certifications

4 certifications

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AS9120B

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ISO 14001

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ESD Control

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CoC Available on Request

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Product overview

Overview

MOSFET N-CH 100V 100A TDSON-8

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Detailed Specifications

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Export Classifications & Environmental

JESD-30 Code

R-PDSO-F5

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F5
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Published
2011
Packaging
Tape & Reel (TR)
Factory Lead Time
26 Weeks
Halogen Free
Halogen Free
Terminal Position
DUAL
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Part Status
Not For New Designs
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM)
400A
Package / Case
8-PowerTDFN
Pbfree Code
no
Mount
Surface Mount
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
11 ns
Series
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs
87nC @ 10V
Power Dissipation
156W
Drain-Source On Resistance-Max
0.0079Ohm
Rds On (Max) @ Id, Vgs
7.9m Ω @ 50A, 10V
Power Dissipation-Max
156W Tc
Avalanche Energy Rating (Eas)
377 mJ
Continuous Drain Current (ID)
13.4A
Manufacturer'S Part No.
BSC079N10NSGATMA1
Vgs(Th) (Max) @ Id
4V @ 110μA
Current - Continuous Drain (Id) @ 25°C
13.4A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds
5900pF @ 50V
Terminal Finish
Tin (Sn)
Turn On Delay Time
24 ns
Number Of Elements
1
Rise Time
40ns
Configuration
SINGLE WITH BUILT-IN DIODE
Turn-Off Delay Time
38 ns
Max Dual Supply Voltage
100V

Common questions

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What is BSC079N10NSGATMA1?

BSC079N10NSGATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BSC079N10NSGATMA1?

BSC079N10NSGATMA1 is listed with package reference -. The current product description is MOSFET N-CH 100V 100A TDSON-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is BSC079N10NSGATMA1 available in stock?

This page currently shows 79387 units in stock and 79387 units available for BSC079N10NSGATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for BSC079N10NSGATMA1?

Yes. This page links to the datasheet for BSC079N10NSGATMA1 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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