Supply original FDMC86261P, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET P-CH 150V 2.7A 8MLP

RoHS
Datasheet
Supply original FDMC86261P, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FDMC86261P

Internal code

TCE000066071

Package

-

Manufacturer

ON Semiconductor

Key specifications

Serise

PowerTrench®

Min Quantity

1

Description

MOSFET P-CH 150V 2.7A 8MLP

key Attributes

-

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Product overview

Overview

MOSFET P-CH 150V 2.7A 8MLP

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Turn On Delay Time

11 ns

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Drain To Source Voltage (Vdss)

150V

Product Parameter

Rise Time

10ns

Product Parameter

Turn-Off Delay Time

18 ns

Turn On Delay Time
11 ns
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
150V
Rise Time
10ns
Turn-Off Delay Time
18 ns
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-609 Code
e4
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
S-PDSO-N5
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Lifecycle Status
ACTIVE (Last Updated: 21 hours ago)
Element Configuration
Single
Manufacturer
ON Semiconductor
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Published
2017
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Series
PowerTrench®
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Contact Plating
Gold
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Fall Time (Typ)
20 ns
Package / Case
8-PowerWDFN
Drain To Source Breakdown Voltage
-150V
Power Dissipation
2.3W
Length
3.3mm
Width
3.3mm
Gate To Source Voltage (Vgs)
25V
Vgs (Max)
±25V
Pulsed Drain Current-Max (IDM)
20A
Drain Current-Max (Abs) (ID)
9A
Height
725μm
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Weight
165.33333mg
Power Dissipation-Max
2.3W Ta 40W Tc
Continuous Drain Current (ID)
2.7A
Input Capacitance (Ciss) (Max) @ Vds
1360pF @ 75V
Manufacturer'S Part No.
FDMC86261P
Current - Continuous Drain (Id) @ 25°C
2.7A Ta 9A Tc
Rds On (Max) @ Id, Vgs
160m Ω @ 2.4A, 10V

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What is FDMC86261P?

FDMC86261P is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDMC86261P?

FDMC86261P is listed with package reference -. The current product description is MOSFET P-CH 150V 2.7A 8MLP, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDMC86261P available in stock?

This page currently shows 23236 units in stock and 17218 units available for FDMC86261P. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDMC86261P by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDMC86261P?

Yes. This page links to the datasheet for FDMC86261P by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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