Supply original NVF6P02T3G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET P-CH 20V 10A SOT-223

RoHS
Datasheet
Supply original NVF6P02T3G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

NVF6P02T3G

Internal code

TCE000064037

Package

SOT-223

Manufacturer

ON Semiconductor

Key specifications

Serise

Automotive, AEC-Q101

Min Quantity

1

Description

MOSFET P-CH 20V 10A SOT-223

key Attributes

-

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Product overview

Overview

MOSFET P-CH 20V 10A SOT-223

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2007

Product Attribute

Factory Lead Time

11 Weeks

REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2007
Factory Lead Time
11 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Terminal Form
GULL WING
Element Configuration
Single
Part Status
Not For New Designs
Manufacturer
ON Semiconductor
Package / Case
TO-261-4, TO-261AA
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Series
Automotive, AEC-Q101
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Vgs(Th) (Max) @ Id
1V @ 250μA
Surface Mount
YES
Radiation Hardening
No
Pbfree Code
yes
Vgs (Max)
±8V
Gate To Source Voltage (Vgs)
8V
Number Of Terminations
4
Height
1.65mm
Width
3.7mm
Length
6.7mm
Number Of Pins
4
Pin Count
4
Drain-Source On Resistance-Max
0.05Ohm
Fall Time (Typ)
60 ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Continuous Drain Current (ID)
10A
Drain To Source Breakdown Voltage
-25V
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Rds On (Max) @ Id, Vgs
50m Ω @ 6A, 4.5V
Pulsed Drain Current-Max (IDM)
35A
Current - Continuous Drain (Id) @ 25°C
10A Ta
Power Dissipation
8.3W
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 16V
Power Dissipation-Max
8.3W Ta
Manufacturer'S Part No.
NVF6P02T3G
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 1 week ago)
Terminal Finish
Tin (Sn)
Number Of Elements
1
Drain To Source Voltage (Vdss)
20V
Turn-Off Delay Time
60 ns
Rise Time
30ns
Turn On Delay Time
8 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is NVF6P02T3G?

NVF6P02T3G is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NVF6P02T3G?

NVF6P02T3G is listed with package reference SOT-223. The current product description is MOSFET P-CH 20V 10A SOT-223, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is NVF6P02T3G available in stock?

This page currently shows 97042 units in stock and 65395 units available for NVF6P02T3G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for NVF6P02T3G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for NVF6P02T3G?

Yes. This page links to the datasheet for NVF6P02T3G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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