Supply original NVF3055L108T1G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 60V 3A SOT223

RoHS
Datasheet
Supply original NVF3055L108T1G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

NVF3055L108T1G

Internal code

TCE000064036

Package

SOT223

Manufacturer

ON Semiconductor

Key specifications

Serise

Automotive, AEC-Q101

Min Quantity

1

Description

MOSFET N-CH 60V 3A SOT223

key Attributes

-

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Product overview

Overview

MOSFET N-CH 60V 3A SOT223

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Product Attribute

REACH Status

REACH Unaffected

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Published
2005
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Terminal Form
GULL WING
Element Configuration
Single
Part Status
Not For New Designs
Manufacturer
ON Semiconductor
Package / Case
TO-261-4, TO-261AA
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Series
Automotive, AEC-Q101
Gate Charge (Qg) (Max) @ Vgs
15nC @ 5V
Vgs(Th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
440pF @ 25V
Surface Mount
YES
Radiation Hardening
No
Pbfree Code
yes
Drain To Source Breakdown Voltage
60V
Number Of Terminations
4
Height
1.65mm
Gate To Source Voltage (Vgs)
15V
Vgs (Max)
±15V
Pulsed Drain Current-Max (IDM)
9A
Power Dissipation
2.1W
Width
3.7mm
Continuous Drain Current (ID)
3A
Length
6.7mm
Current - Continuous Drain (Id) @ 25°C
3A Ta
Number Of Pins
4
Power Dissipation-Max
1.3W Ta
Drain Current-Max (Abs) (ID)
3A
Pin Count
4
Fall Time (Typ)
27 ns
Resistance
120mOhm
Drive Voltage (Max Rds On,Min Rds On)
5V
Rds On (Max) @ Id, Vgs
120m Ω @ 1.5A, 5V
Manufacturer'S Part No.
NVF3055L108T1G
Terminal Finish
Tin (Sn)
Turn On Delay Time
11 ns
Number Of Elements
1
Turn-Off Delay Time
22 ns
Rise Time
35ns

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What is NVF3055L108T1G?

NVF3055L108T1G is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NVF3055L108T1G?

NVF3055L108T1G is listed with package reference SOT223. The current product description is MOSFET N-CH 60V 3A SOT223, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is NVF3055L108T1G available in stock?

This page currently shows 29076 units in stock and 28094 units available for NVF3055L108T1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for NVF3055L108T1G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for NVF3055L108T1G?

Yes. This page links to the datasheet for NVF3055L108T1G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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