Supply original NDD04N60ZT4G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 600V 4.1A DPAK

RoHS
Datasheet
Supply original NDD04N60ZT4G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

NDD04N60ZT4G

Internal code

TCE000064028

Package

TO-252-3

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET N-CH 600V 4.1A DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 600V 4.1A DPAK

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Turn On Delay Time

13 ns

Product Parameter

Number Of Elements

1

Product Parameter

Rise Time

9ns

Product Parameter

Turn-Off Delay Time

24 ns

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Turn On Delay Time
13 ns
Number Of Elements
1
Rise Time
9ns
Turn-Off Delay Time
24 ns
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Obsolete
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
ON Semiconductor
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Length
6.73mm
Subcategory
FET General Purpose Powers
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Surface Mount
YES
Contact Plating
Tin
Radiation Hardening
No
Pbfree Code
yes
Number Of Terminations
2
Width
6.22mm
Height
2.38mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Number Of Pins
4
Pin Count
4
Gate To Source Voltage (Vgs)
30V
Input Capacitance (Ciss) (Max) @ Vds
640pF @ 25V
Drain To Source Breakdown Voltage
600V
Vgs(Th) (Max) @ Id
4.5V @ 50μA
Pulsed Drain Current-Max (IDM)
20A
Fall Time (Typ)
15 ns
Power Dissipation
83W
Power Dissipation-Max
83W Tc
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Rds On (Max) @ Id, Vgs
2 Ω @ 2A, 10V
Drain Current-Max (Abs) (ID)
2.6A
Continuous Drain Current (ID)
4.1A
Resistance
1.8Ohm
Current - Continuous Drain (Id) @ 25°C
4.1A Tc
Threshold Voltage
3.9V
Manufacturer'S Part No.
NDD04N60ZT4G
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is NDD04N60ZT4G?

NDD04N60ZT4G is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NDD04N60ZT4G?

NDD04N60ZT4G is listed with package reference TO-252-3. The current product description is MOSFET N-CH 600V 4.1A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 38683 units in stock and 21120 units available for NDD04N60ZT4G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for NDD04N60ZT4G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

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Yes. This page links to the datasheet for NDD04N60ZT4G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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