Supply original IRF6795MTR1PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 25V 32A DIRECTFET

RoHS
Datasheet
Supply original IRF6795MTR1PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF6795MTR1PBF

Internal code

TCE000062950

Package

2010

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 25V 32A DIRECTFET

key Attributes

-

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ISO 14001

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Product overview

Overview

MOSFET N-CH 25V 32A DIRECTFET

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Detailed Specifications

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Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

RoHS Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-609 Code

e1

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS Compliant
REACH SVHC
No SVHC
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-XBCC-N3
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Published
2010
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Operating Temperature
-40°C~150°C TJ
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
5
Nominal Vgs
1.8 V
Gate To Source Voltage (Vgs)
20V
Terminal Position
BOTTOM
Number Of Terminations
3
Length
6.35mm
Drain To Source Breakdown Voltage
25V
Fall Time (Typ)
11 ns
Power Dissipation
2.8W
Width
5.05mm
Continuous Drain Current (ID)
32A
Additional Feature
LOW CONDUCTION LOSS
Recovery Time
41 ns
Package / Case
DirectFET™ Isometric MX
Vgs(Th) (Max) @ Id
2.35V @ 100μA
Resistance
1.8MOhm
Height
506μm
Manufacturer'S Part No.
IRF6795MTR1PBF
Gate Charge (Qg) (Max) @ Vgs
53nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
4280pF @ 13V
Power Dissipation-Max
2.8W Ta 75W Tc
Current - Continuous Drain (Id) @ 25°C
32A Ta 160A Tc
Rds On (Max) @ Id, Vgs
1.8m Ω @ 32A, 10V
Terminal Finish
TIN SILVER COPPER
Rise Time
27ns
Number Of Elements
1
Turn-Off Delay Time
16 ns
Turn On Delay Time
16 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Dual Supply Voltage
25V

Common questions

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What is IRF6795MTR1PBF?

IRF6795MTR1PBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF6795MTR1PBF?

IRF6795MTR1PBF is listed with package reference 2010. The current product description is MOSFET N-CH 25V 32A DIRECTFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF6795MTR1PBF available in stock?

This page currently shows 99962 units in stock and 81194 units available for IRF6795MTR1PBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRF6795MTR1PBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IRF6795MTR1PBF?

Yes. This page links to the datasheet for IRF6795MTR1PBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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