Supply original IPB030N08N3GATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 80V 160A TO263-7

RoHS
Datasheet
Supply original IPB030N08N3GATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPB030N08N3GATMA1

Internal code

TCE000062929

Package

TO263

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 80V 160A TO263-7

key Attributes

-

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ISO 14001

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Overview

MOSFET N-CH 80V 160A TO263-7

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PSSO-G6
Terminal Finish
Matte Tin (Sn)
Turn-Off Delay Time
45 ns
Turn On Delay Time
23 ns
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
79ns
Max Dual Supply Voltage
80V
Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Factory Lead Time
13 Weeks
Packaging
Tape & Reel (TR)
Halogen Free
Halogen Free
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Pbfree Code
no
Mount
Surface Mount
Terminal Position
SINGLE
Number Of Terminations
6
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Number Of Pins
7
Pin Count
7
Fall Time (Typ)
14 ns
Series
OptiMOS™
Threshold Voltage
2.8V
Gate Charge (Qg) (Max) @ Vgs
117nC @ 10V
Continuous Drain Current (ID)
160A
Current - Continuous Drain (Id) @ 25°C
160A Tc
Pulsed Drain Current-Max (IDM)
640A
Package / Case
TO-263-7, D2Pak (6 Leads + Tab)
Drain-Source On Resistance-Max
0.003Ohm
Power Dissipation
214W
Power Dissipation-Max
214W Tc
Manufacturer'S Part No.
IPB030N08N3GATMA1
Vgs(Th) (Max) @ Id
3.5V @ 155μA
Input Capacitance (Ciss) (Max) @ Vds
8110pF @ 40V
Rds On (Max) @ Id, Vgs
3m Ω @ 100A, 10V

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What is IPB030N08N3GATMA1?

IPB030N08N3GATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPB030N08N3GATMA1?

IPB030N08N3GATMA1 is listed with package reference TO263. The current product description is MOSFET N-CH 80V 160A TO263-7, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IPB030N08N3GATMA1 available in stock?

This page currently shows 54352 units in stock and 45996 units available for IPB030N08N3GATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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