Supply original FDD3670, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 100V 34A D-PAK

RoHS
Datasheet
Supply original FDD3670, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FDD3670

Internal code

TCE000062805

Package

TO-252-3

Manufacturer

ON Semiconductor

Key specifications

Serise

PowerTrench®

Min Quantity

1

Description

MOSFET N-CH 100V 34A D-PAK

key Attributes

-

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ISO 14001

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Product overview

Overview

MOSFET N-CH 100V 34A D-PAK

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

8 Weeks

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Packaging
Tape & Reel (TR)
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
ON Semiconductor
Height
2.39mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Length
6.73mm
Series
PowerTrench®
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Gate To Source Voltage (Vgs)
20V
Voltage - Rated DC
100V
Fall Time (Typ)
25 ns
Drain To Source Breakdown Voltage
100V
Weight
260.37mg
Threshold Voltage
2.5V
Power Dissipation
83W
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Resistance
32mOhm
Current Rating
34A
Power Dissipation-Max
3.8W Ta 83W Tc
Continuous Drain Current (ID)
34A
Manufacturer'S Part No.
FDD3670
Current - Continuous Drain (Id) @ 25°C
34A Ta
Input Capacitance (Ciss) (Max) @ Vds
2490pF @ 50V
Rds On (Max) @ Id, Vgs
32m Ω @ 7.3A, 10V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Number Of Elements
1
Turn On Delay Time
16 ns
Rise Time
10ns
Turn-Off Delay Time
56 ns

Common questions

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What is FDD3670?

FDD3670 is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDD3670?

FDD3670 is listed with package reference TO-252-3. The current product description is MOSFET N-CH 100V 34A D-PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDD3670 available in stock?

This page currently shows 87678 units in stock and 18786 units available for FDD3670. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for FDD3670?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDD3670 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDD3670?

Yes. This page links to the datasheet for FDD3670 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify FDD3670 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDD3670 before approving the order.

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