Supply original DMN6068SE-13, Transistors - FETs, MOSFETs - Single, by Diodes Incorporated

MOSFET N-CH 60V 4.1A SOT223

RoHS
Datasheet
Supply original DMN6068SE-13, Transistors - FETs, MOSFETs - Single, by Diodes Incorporated | TrustCompo

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Part Number

DMN6068SE-13

Internal code

TCE000062523

Package

SOT223

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET N-CH 60V 4.1A SOT223

key Attributes

-

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Product overview

Overview

MOSFET N-CH 60V 4.1A SOT223

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

16 Weeks

Product Attribute

Published

2011

Product Attribute

Packaging

Tape & Reel (TR)

Part Status
Active
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Published
2011
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Package / Case
TO-261-4, TO-261AA
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Manufacturer
Diodes Incorporated
Additional Feature
HIGH RELIABILITY
Vgs(Th) (Max) @ Id
3V @ 250μA
Weight
7.994566mg
Subcategory
FET General Purpose Powers
Pbfree Code
no
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
4
Height
1.65mm
Width
3.7mm
Length
6.7mm
Pin Count
4
Continuous Drain Current (ID)
5.6A
Current - Continuous Drain (Id) @ 25°C
4.1A Ta
Avalanche Energy Rating (Eas)
37.5 mJ
Resistance
68mOhm
Power Dissipation-Max
2W Ta
Pulsed Drain Current-Max (IDM)
20.8A
Rds On (Max) @ Id, Vgs
68m Ω @ 12A, 10V
Power Dissipation
3.7W
Manufacturer'S Part No.
DMN6068SE-13
Gate Charge (Qg) (Max) @ Vgs
10.3nC @ 10V
Fall Time (Typ)
8.7 ns
Input Capacitance (Ciss) (Max) @ Vds
502pF @ 30V
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
1 (Unlimited)
JESD-30 Code
R-PDSO-G4
ECCN Code
EAR99
Number Of Channels
1
Number Of Elements
1
Time@Peak Reflow Temperature-Max (S)
40
Turn On Delay Time
3.6 ns
Turn-Off Delay Time
11.9 ns
Rise Time
10.8ns

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What is DMN6068SE-13?

DMN6068SE-13 is a Transistors - FETs, MOSFETs - Single component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DMN6068SE-13?

DMN6068SE-13 is listed with package reference SOT223. The current product description is MOSFET N-CH 60V 4.1A SOT223, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is DMN6068SE-13 available in stock?

This page currently shows 65936 units in stock and 51775 units available for DMN6068SE-13. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for DMN6068SE-13?

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