Supply original STB3NK60ZT4, Transistors - FETs, MOSFETs - Single, by STMicroelectronics

MOSFET N-CH 600V 2.4A D2PAK

RoHS
Datasheet
Supply original STB3NK60ZT4, Transistors - FETs, MOSFETs - Single, by STMicroelectronics | TrustCompo

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Part Number

STB3NK60ZT4

Internal code

TCE000062330

Package

TO-263-3

Manufacturer

STMicroelectronics

Key specifications

Serise

SuperMESH™

Min Quantity

1

Description

MOSFET N-CH 600V 2.4A D2PAK

key Attributes

-

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ISO 14001

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Product overview

Overview

MOSFET N-CH 600V 2.4A D2PAK

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Detailed Specifications

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Terminal Form
GULL WING
Element Configuration
Single
Peak Reflow Temperature (Cel)
245
Current Rating
2.4A
Manufacturer
STMicroelectronics
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation
45W
Power Dissipation-Max
45W Tc
Vgs (Max)
±30V
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Pin Count
3
Voltage - Rated DC
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Continuous Drain Current (ID)
1.2A
Height
4.6mm
Lifecycle Status
NRND (Last Updated: 7 months ago)
Gate To Source Voltage (Vgs)
30V
Drain To Source Breakdown Voltage
600V
Vgs(Th) (Max) @ Id
4.5V @ 50μA
Series
SuperMESH™
Threshold Voltage
3.75V
Width
10.4mm
Fall Time (Typ)
14 ns
Length
10.75mm
Rds On (Max) @ Id, Vgs
3.6 Ω @ 1.2A, 10V
Pulsed Drain Current-Max (IDM)
9.6A
Gate Charge (Qg) (Max) @ Vgs
11.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
311pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.4A Tc
Manufacturer'S Part No.
STB3NK60ZT4
Base Part Number
STB3N
Terminal Finish
Matte Tin (Sn) - annealed
Number Of Elements
1
Turn On Delay Time
9 ns
Rise Time
14ns
Turn-Off Delay Time
19 ns

Common questions

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What is STB3NK60ZT4?

STB3NK60ZT4 is a Transistors - FETs, MOSFETs - Single component from STMicroelectronics. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for STB3NK60ZT4?

STB3NK60ZT4 is listed with package reference TO-263-3. The current product description is MOSFET N-CH 600V 2.4A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is STB3NK60ZT4 available in stock?

This page currently shows 99175 units in stock and 20188 units available for STB3NK60ZT4. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for STB3NK60ZT4 by STMicroelectronics. The TrustCompo team can review price, availability, and documentation support.

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