Supply original BSC019N02KSGAUMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 20V 100A TDSON-8

RoHS
Datasheet
Supply original BSC019N02KSGAUMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

BSC019N02KSGAUMA1

Internal code

TCE000061901

Package

-

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 20V 100A TDSON-8

key Attributes

-

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Technical document

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Product overview

Overview

MOSFET N-CH 20V 100A TDSON-8

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

Max Dual Supply Voltage

20V

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

15 ns

Product Parameter

Turn-Off Delay Time

95 ns

Product Parameter

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Finish
Tin (Sn)
Max Dual Supply Voltage
20V
Number Of Elements
1
Turn On Delay Time
15 ns
Turn-Off Delay Time
95 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
187ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F5
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Published
2011
Packaging
Tape & Reel (TR)
Halogen Free
Halogen Free
Terminal Position
DUAL
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Part Status
Not For New Designs
Factory Lead Time
39 Weeks
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Additional Feature
AVALANCHE RATED
Package / Case
8-PowerTDFN
Pbfree Code
no
Mount
Surface Mount
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reflow Temperature-Max (S)
NOT SPECIFIED
Fall Time (Typ)
8 ns
Gate To Source Voltage (Vgs)
12V
Pulsed Drain Current-Max (IDM)
200A
Continuous Drain Current (ID)
100A
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Power Dissipation
104W
Series
OptiMOS™
Drain Current-Max (Abs) (ID)
30A
Drain-Source On Resistance-Max
0.003Ohm
Current - Continuous Drain (Id) @ 25°C
30A Ta 100A Tc
Vgs(Th) (Max) @ Id
1.2V @ 350μA
Manufacturer'S Part No.
BSC019N02KSGAUMA1
Rds On (Max) @ Id, Vgs
1.95m Ω @ 50A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
13000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
85nC @ 4.5V
Power Dissipation-Max
2.8W Ta 104W Tc

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BSC019N02KSGAUMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

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