Supply original AUIRFZ24NS, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 55V 17A D2PAK

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Datasheet
Supply original AUIRFZ24NS, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

AUIRFZ24NS

Internal code

TCE000061884

Package

TO-252-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 55V 17A D2PAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 55V 17A D2PAK

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Packaging

Tube

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

16 Weeks

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Packaging
Tube
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Published
2011
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Length
10.67mm
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Current - Continuous Drain (Id) @ 25°C
17A Tc
Additional Feature
AVALANCHE RATED
Power Dissipation
3.8W
Input Capacitance (Ciss) (Max) @ Vds
370pF @ 25V
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Height
4.83mm
Width
9.65mm
Threshold Voltage
4V
Drain To Source Breakdown Voltage
55V
Fall Time (Typ)
27 ns
Continuous Drain Current (ID)
17A
Pulsed Drain Current-Max (IDM)
68A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Power Dissipation-Max
3.8W Ta 45W Tc
Rds On (Max) @ Id, Vgs
70m Ω @ 10A, 10V
Drain-Source On Resistance-Max
0.07Ohm
Manufacturer'S Part No.
AUIRFZ24NS
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-G2
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Turn On Delay Time
4.9 ns
Rise Time
34ns
Number Of Elements
1
Turn-Off Delay Time
19 ns

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What is AUIRFZ24NS?

AUIRFZ24NS is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for AUIRFZ24NS?

AUIRFZ24NS is listed with package reference TO-252-3. The current product description is MOSFET N-CH 55V 17A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is AUIRFZ24NS available in stock?

This page currently shows 53440 units in stock and 53440 units available for AUIRFZ24NS. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for AUIRFZ24NS?

Yes. This page links to the datasheet for AUIRFZ24NS by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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