Supply original AUIRLR3110Z, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 100V 63A DPAK

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Datasheet
Supply original AUIRLR3110Z, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

AUIRLR3110Z

Internal code

TCE000061851

Package

TO-252-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 100V 63A DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 100V 63A DPAK

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Detailed Specifications

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Product Parameter

Turn On Delay Time

24 ns

Product Parameter

Number Of Elements

1

Product Parameter

Rise Time

110ns

Product Parameter

Turn-Off Delay Time

33 ns

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Turn On Delay Time
24 ns
Number Of Elements
1
Rise Time
110ns
Turn-Off Delay Time
33 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Packaging
Tube
Mounting Type
Surface Mount
Published
2011
Factory Lead Time
26 Weeks
Part Status
Discontinued
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Height
2.39mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Length
6.73mm
Power Dissipation-Max
140W Tc
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Drain To Source Breakdown Voltage
100V
Threshold Voltage
1V
Continuous Drain Current (ID)
42A
Power Dissipation
140W
Gate To Source Voltage (Vgs)
16V
Fall Time (Typ)
48 ns
Additional Feature
ULTRA-LOW RESISTANCE
Vgs(Th) (Max) @ Id
2.5V @ 100μA
Pulsed Drain Current-Max (IDM)
250A
Rds On (Max) @ Id, Vgs
14m Ω @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs
48nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
3980pF @ 25V
Manufacturer'S Part No.
AUIRLR3110Z
Base Part Number
AUIRLR3110Z

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What is AUIRLR3110Z?

AUIRLR3110Z is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for AUIRLR3110Z?

AUIRLR3110Z is listed with package reference TO-252-3. The current product description is MOSFET N-CH 100V 63A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 40427 units in stock and 30193 units available for AUIRLR3110Z. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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