Supply original IRLR6225TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 20V 100A DPAK

RoHS
Datasheet
Supply original IRLR6225TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRLR6225TRPBF

Internal code

TCE000061410

Package

TO-252-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 20V 100A DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 20V 100A DPAK

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

12 Weeks

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Published
2009
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Additional Feature
HIGH RELIABILITY
Drain Current-Max (Abs) (ID)
42A
Pulsed Drain Current-Max (IDM)
400A
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Terminal Position
SINGLE
Number Of Terminations
2
Gate To Source Voltage (Vgs)
12V
Continuous Drain Current (ID)
100A
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Resistance
4mOhm
Drain To Source Breakdown Voltage
20V
Fall Time (Typ)
52 ns
Current - Continuous Drain (Id) @ 25°C
100A Tc
Nominal Vgs
800 mV
Operating Temperature
-50°C~150°C TJ
Power Dissipation
63W
Power Dissipation-Max
63W Tc
Vgs(Th) (Max) @ Id
1.1V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
3770pF @ 10V
Rds On (Max) @ Id, Vgs
4m Ω @ 21A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
72nC @ 4.5V
Manufacturer'S Part No.
IRLR6225TRPBF
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Turn-Off Delay Time
63 ns
Rise Time
37ns
Turn On Delay Time
9.7 ns
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is IRLR6225TRPBF?

IRLR6225TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRLR6225TRPBF?

IRLR6225TRPBF is listed with package reference TO-252-3. The current product description is MOSFET N-CH 20V 100A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRLR6225TRPBF available in stock?

This page currently shows 89929 units in stock and 32961 units available for IRLR6225TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRLR6225TRPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IRLR6225TRPBF?

Yes. This page links to the datasheet for IRLR6225TRPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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