Supply original IRFS4010TRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

RoHS
Datasheet
Supply original IRFS4010TRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFS4010TRLPBF

Internal code

TCE000061386

Package

TO-263-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 100V 180A D2PAK

key Attributes

-

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Product overview

Overview

The IRFS4010TRLPBF is an N-channel MOSFET manufactured by Infineon Technologies. MOSFETs are widely used in electronic circuits as efficient switching devices due to their high-speed switching and low on-resistance. The IRFS4010TRLPBF is designed for various applications that require high current and voltage handling capabilities.

Key Features:

  • N-Channel MOSFET: The IRFS4010TRLPBF is an N-channel enhancement-mode power MOSFET, ideal for high-side switching applications.

  • High Voltage and Current Rating: This device can handle significant voltage and current levels, making it suitable for high-power applications.

  • Low On-Resistance: The MOSFET features low on-resistance, which minimizes power dissipation and enhances overall efficiency.

  • Fast Switching Speed: Designed for high-speed switching, this MOSFET is suitable for use in power supplies, DC-DC converters, and motor control applications.

  • Low Gate Charge: With a low gate charge, the IRFS4010TRLPBF is easier to drive and consumes less power during operation.

  • TO-252 Package: The MOSFET is housed in a TO-252 (DPak) package, which offers good thermal performance and ease of mounting on PCBs.

  • Lead-Free and RoHS Compliant: The part number includes "PBF," indicating it is lead-free and compliant with the Restriction of Hazardous Substances (RoHS) directive.

Applications:

  • DC-DC Converters: Used in buck, boost, and other DC-DC converter topologies.

  • Motor Control: Employed in controlling motors in various applications, such as electric vehicles and industrial automation.

  • Power Supplies: Utilized in switching power supplies for efficient energy conversion.

  • Battery Management: Helps in battery charging and discharging applications, particularly in electric vehicles and renewable energy systems.

  • Other Switching Applications: Suitable for use in general switching applications in various electronic systems.

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Detailed Specifications

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Turn On Delay Time
21 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Rise Time
86ns
Turn-Off Delay Time
100 ns
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Published
2011
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Terminal Position
SINGLE
Number Of Terminations
2
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Width
9.65mm
Height
4.826mm
Drain To Source Breakdown Voltage
100V
Length
10.668mm
Drain-Source On Resistance-Max
0.0047Ohm
Power Dissipation-Max
375W Tc
Fall Time (Typ)
77 ns
Current - Continuous Drain (Id) @ 25°C
180A Tc
Continuous Drain Current (ID)
180A
Pulsed Drain Current-Max (IDM)
720A
Power Dissipation
375W
Rds On (Max) @ Id, Vgs
4.7m Ω @ 106A, 10V
Input Capacitance (Ciss) (Max) @ Vds
9575pF @ 50V
Gate Charge (Qg) (Max) @ Vgs
215nC @ 10V
Manufacturer'S Part No.
IRFS4010TRLPBF

Common questions

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Quick answers for buyers reviewing IRFS4010TRLPBF, stock, documentation, and sourcing steps.

What is IRFS4010TRLPBF?

IRFS4010TRLPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFS4010TRLPBF?

IRFS4010TRLPBF is listed with package reference TO-263-3. The current product description is MOSFET N-CH 100V 180A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRFS4010TRLPBF available in stock?

This page currently shows 33940 units in stock and 33940 units available for IRFS4010TRLPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for IRFS4010TRLPBF?

Yes. This page links to the datasheet for IRFS4010TRLPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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