Supply original IPD135N03LGATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 30V 30A TO252-3

RoHS
Datasheet
Supply original IPD135N03LGATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPD135N03LGATMA1

Internal code

TCE000061349

Package

TO252

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 30V 30A TO252-3

key Attributes

-

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Product overview

Overview

MOSFET N-CH 30V 30A TO252-3

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

Published

2008

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Packaging

Tape & Reel (TR)

Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Factory Lead Time
18 Weeks
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Length
6.73mm
Pbfree Code
no
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Pin Count
4
Continuous Drain Current (ID)
30A
Current - Continuous Drain (Id) @ 25°C
30A Tc
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Series
OptiMOS™
Vgs(Th) (Max) @ Id
2.2V @ 250μA
Avalanche Energy Rating (Eas)
20 mJ
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
HTS Code
8541.29.00.95
Power Dissipation
31W
Power Dissipation-Max
31W Tc
Fall Time (Typ)
2.2 ns
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 15V
Height
2.41mm
Manufacturer'S Part No.
IPD135N03LGATMA1
Pulsed Drain Current-Max (IDM)
210A
Rds On (Max) @ Id, Vgs
13.5m Ω @ 30A, 10V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Turn-Off Delay Time
12 ns
Terminal Finish
Tin (Sn)
Number Of Elements
1
Drain To Source Voltage (Vdss)
30V
Turn On Delay Time
3 ns

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What is IPD135N03LGATMA1?

IPD135N03LGATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPD135N03LGATMA1?

IPD135N03LGATMA1 is listed with package reference TO252. The current product description is MOSFET N-CH 30V 30A TO252-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IPD135N03LGATMA1 available in stock?

This page currently shows 87436 units in stock and 16469 units available for IPD135N03LGATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for IPD135N03LGATMA1?

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