Supply original IPD14N06S280ATMA2, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 55V 17A TO252-3

RoHS
Datasheet
Supply original IPD14N06S280ATMA2, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPD14N06S280ATMA2

Internal code

TCE000061348

Package

TO252

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 55V 17A TO252-3

key Attributes

-

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Product overview

Overview

MOSFET N-CH 55V 17A TO252-3

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Contains Lead

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2006

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Published
2006
Packaging
Tape & Reel (TR)
Factory Lead Time
10 Weeks
Halogen Free
Halogen Free
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Current - Continuous Drain (Id) @ 25°C
17A Tc
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Length
6.5mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
20 ns
Threshold Voltage
2.1V
Height
2.5mm
Drain To Source Breakdown Voltage
55V
Continuous Drain Current (ID)
17A
Pulsed Drain Current-Max (IDM)
68A
Series
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Power Dissipation
47W
Drain-Source On Resistance-Max
0.08Ohm
Power Dissipation-Max
47W Tc
Rds On (Max) @ Id, Vgs
80m Ω @ 7A, 10V
Vgs(Th) (Max) @ Id
4V @ 14μA
Input Capacitance (Ciss) (Max) @ Vds
293pF @ 25V
Manufacturer'S Part No.
IPD14N06S280ATMA2
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Turn-Off Delay Time
15 ns
Number Of Channels
1
Number Of Elements
1
Max Dual Supply Voltage
55V
Turn On Delay Time
6 ns
Rise Time
17ns

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What is IPD14N06S280ATMA2?

IPD14N06S280ATMA2 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPD14N06S280ATMA2?

IPD14N06S280ATMA2 is listed with package reference TO252. The current product description is MOSFET N-CH 55V 17A TO252-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 47577 units in stock and 45727 units available for IPD14N06S280ATMA2. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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