Supply original IPD079N06L3GBTMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

RoHS
Datasheet
Supply original IPD079N06L3GBTMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPD079N06L3GBTMA1

Internal code

TCE000061347

Package

TO252

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 60V 50A TO252-3

key Attributes

-

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Technical document

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Globally recognized certifications

4 certifications

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ISO 9001

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AS9120B

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ISO 14001

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ESD Control

Electrostatic handling standards to help protect sensitive components.

Authenticity Verification

CoC Available on Request

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Product overview

Overview

MOSFET N-CH 60V 50A TO252-3

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Detailed Specifications

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Number Of Elements
1
Turn On Delay Time
15 ns
Turn-Off Delay Time
37 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Max Dual Supply Voltage
60V
Rise Time
26ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Published
2003
Packaging
Tape & Reel (TR)
Factory Lead Time
18 Weeks
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Power Dissipation
79W
Power Dissipation-Max
79W Tc
Pbfree Code
no
Mount
Surface Mount
Number Of Pins
3
Terminal Position
SINGLE
Number Of Terminations
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Additional Feature
LOGIC LEVEL COMPATIBLE
Pin Count
4
Pulsed Drain Current-Max (IDM)
200A
Gate Charge (Qg) (Max) @ Vgs
29nC @ 4.5V
Halogen Free
Not Halogen Free
Current - Continuous Drain (Id) @ 25°C
50A Tc
Continuous Drain Current (ID)
50A
Series
OptiMOS™
Fall Time (Typ)
7 ns
Drain-Source On Resistance-Max
0.0079Ohm
Input Capacitance (Ciss) (Max) @ Vds
4900pF @ 30V
Vgs(Th) (Max) @ Id
2.2V @ 34μA
Manufacturer'S Part No.
IPD079N06L3GBTMA1
Rds On (Max) @ Id, Vgs
7.9m Ω @ 50A, 10V

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What is IPD079N06L3GBTMA1?

IPD079N06L3GBTMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPD079N06L3GBTMA1?

IPD079N06L3GBTMA1 is listed with package reference TO252. The current product description is MOSFET N-CH 60V 50A TO252-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IPD079N06L3GBTMA1 available in stock?

This page currently shows 15000 units in stock and 15000 units available for IPD079N06L3GBTMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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