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Supply original FDMC86248, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N CH 150V 3.4A POWER33

RoHS
Datasheet
Supply original FDMC86248, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FDMC86248

Internal code

TCE000059555

Package

2010

Manufacturer

ON Semiconductor

Key specifications

Serise

PowerTrench®

Min Quantity

1

Category

Discrete Semiconductor Products

Sub Categroy

Transistors - FETs, MOSFETs - Single

Description

MOSFET N CH 150V 3.4A POWER33

key Attributes

-

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ISO 14001

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Product overview

Overview

MOSFET N CH 150V 3.4A POWER33

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

Number Of Elements

1

Product Parameter

Drain To Source Voltage (Vdss)

150V

Product Parameter

Turn-Off Delay Time

11 ns

Product Parameter

Turn On Delay Time

6.9 ns

Product Parameter

Rise Time

1.4ns

Terminal Finish
Tin (Sn)
Number Of Elements
1
Drain To Source Voltage (Vdss)
150V
Turn-Off Delay Time
11 ns
Turn On Delay Time
6.9 ns
Rise Time
1.4ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Packaging
Tape & Reel (TR)
Published
2010
Terminal Position
DUAL
Element Configuration
Single
Height
1.05mm
Manufacturer
ON Semiconductor
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Package / Case
8-PowerTDFN
Series
PowerTrench®
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Gate To Source Voltage (Vgs)
20V
Gate Charge (Qg) (Max) @ Vgs
9nC @ 10V
Power Dissipation
2.3W
JEDEC-95 Code
MO-240BA
Length
3.3mm
Width
3.3mm
Weight
32.13mg
Continuous Drain Current (ID)
3.4A
Current - Continuous Drain (Id) @ 25°C
3.4A Ta
Nominal Vgs
3.2 V
Avalanche Energy Rating (Eas)
37 mJ
Drain-Source On Resistance-Max
0.09Ohm
Power Dissipation-Max
2.3W Ta 36W Tc
Fall Time (Typ)
2.8 ns
Manufacturer'S Part No.
FDMC86248
Vgs(Th) (Max) @ Id
4V @ 250mA
Rds On (Max) @ Id, Vgs
90m Ω @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
525pF @ 75V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
S-PDSO-N5

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What is FDMC86248?

FDMC86248 is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDMC86248?

FDMC86248 is listed with package reference 2010. The current product description is MOSFET N CH 150V 3.4A POWER33, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDMC86248 available in stock?

This page currently shows 95419 units in stock and 95419 units available for FDMC86248. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDMC86248 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDMC86248?

Yes. This page links to the datasheet for FDMC86248 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDMC86248 before approving the order.

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