Supply original SI2333CDS-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET P-CH 12V 7.1A SOT23-3

RoHS
Datasheet
Supply original SI2333CDS-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SI2333CDS-T1-E3

Internal code

TCE000059462

Package

SOT23

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET P-CH 12V 7.1A SOT23-3

key Attributes

-

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Overview

MOSFET P-CH 12V 7.1A SOT23-3

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Detailed Specifications

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Height
1.016mm
Manufacturer
Vishay
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(Th) (Max) @ Id
1V @ 250μA
Length
3.0226mm
Series
TrenchFET®
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Vgs (Max)
±8V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Gate To Source Voltage (Vgs)
8V
Number Of Terminations
3
Power Dissipation
1.25W
Width
1.397mm
Fall Time (Typ)
35 ns
Gate Charge (Qg) (Max) @ Vgs
25nC @ 4.5V
Drain To Source Breakdown Voltage
-12V
Weight
1.437803g
Resistance
35MOhm
Threshold Voltage
-400mV
Continuous Drain Current (ID)
5.1A
Rds On (Max) @ Id, Vgs
35m Ω @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C
7.1A Tc
Input Capacitance (Ciss) (Max) @ Vds
1225pF @ 6V
Power Dissipation-Max
1.25W Ta 2.5W Tc
Manufacturer'S Part No.
SI2333CDS-T1-E3
Terminal Finish
Matte Tin (Sn)
Turn On Delay Time
13 ns
Turn-Off Delay Time
45 ns
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
12V
Rise Time
35ns

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What is SI2333CDS-T1-E3?

SI2333CDS-T1-E3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SI2333CDS-T1-E3?

SI2333CDS-T1-E3 is listed with package reference SOT23. The current product description is MOSFET P-CH 12V 7.1A SOT23-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SI2333CDS-T1-E3 available in stock?

This page currently shows 22375 units in stock and 15021 units available for SI2333CDS-T1-E3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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