Supply original IRF9Z24NSPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET P-CH 55V 12A D2PAK

RoHS
Datasheet
Supply original IRF9Z24NSPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF9Z24NSPBF

Internal code

TCE000056518

Package

TO-263-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET P-CH 55V 12A D2PAK

key Attributes

-

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Product overview

Overview

MOSFET P-CH 55V 12A D2PAK

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Turn On Delay Time

13 ns

Product Parameter

Terminal Finish

Matte Tin (Sn) - with Nickel (Ni) barrier

Product Parameter

Number Of Elements

1

Product Parameter

Dual Supply Voltage

55V

Product Parameter

Rise Time

55ns

Product Parameter

Turn-Off Delay Time

23 ns

Turn On Delay Time
13 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Dual Supply Voltage
55V
Rise Time
55ns
Turn-Off Delay Time
23 ns
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Published
2005
Part Status
Discontinued
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Length
10.67mm
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
FET Type
P-Channel
Subcategory
Other Transistors
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Nominal Vgs
-4 V
Threshold Voltage
-4V
Fall Time (Typ)
37 ns
Power Dissipation
45W
Current - Continuous Drain (Id) @ 25°C
12A Tc
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Height
4.83mm
Drain To Source Breakdown Voltage
-55V
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Pulsed Drain Current-Max (IDM)
48A
Avalanche Energy Rating (Eas)
96 mJ
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Rds On (Max) @ Id, Vgs
175m Ω @ 7.2A, 10V
Continuous Drain Current (ID)
-12A
Power Dissipation-Max
3.8W Ta 45W Tc
Width
10.54mm
Manufacturer'S Part No.
IRF9Z24NSPBF
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is IRF9Z24NSPBF?

IRF9Z24NSPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF9Z24NSPBF?

IRF9Z24NSPBF is listed with package reference TO-263-3. The current product description is MOSFET P-CH 55V 12A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF9Z24NSPBF available in stock?

This page currently shows 38695 units in stock and 13489 units available for IRF9Z24NSPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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