Supply original IRF6612TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 30V 24A DIRECTFET

RoHS
Datasheet
Supply original IRF6612TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF6612TRPBF

Internal code

TCE000056515

Package

-

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 30V 24A DIRECTFET

key Attributes

-

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Product overview

Overview

MOSFET N-CH 30V 24A DIRECTFET

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Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

RoHS Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-609 Code

e1

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS Compliant
REACH SVHC
No SVHC
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-XBCC-N3
Terminal Finish
TIN SILVER COPPER
Number Of Elements
1
Turn-Off Delay Time
21 ns
Turn On Delay Time
15 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
52ns
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Current Rating
24A
Terminal Form
NO LEAD
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Operating Temperature
-40°C~150°C TJ
Drain-Source On Resistance-Max
0.0033Ohm
Reflow Temperature-Max (S)
30
Mount
Surface Mount
Number Of Pins
5
Nominal Vgs
1.8 V
Gate To Source Voltage (Vgs)
20V
Terminal Position
BOTTOM
Number Of Terminations
3
Voltage - Rated DC
30V
Drain To Source Breakdown Voltage
30V
Length
6.35mm
Width
5.05mm
Power Dissipation
89W
Avalanche Energy Rating (Eas)
37 mJ
Vgs(Th) (Max) @ Id
2.25V @ 250μA
Package / Case
DirectFET™ Isometric MX
Power Dissipation-Max
2.8W Ta 89W Tc
Fall Time (Typ)
4.8 ns
Input Capacitance (Ciss) (Max) @ Vds
3970pF @ 15V
Height
506μm
Current - Continuous Drain (Id) @ 25°C
24A Ta 136A Tc
Pulsed Drain Current-Max (IDM)
190A
Rds On (Max) @ Id, Vgs
3.3m Ω @ 24A, 10V
Gate Charge (Qg) (Max) @ Vgs
45nC @ 4.5V
Continuous Drain Current (ID)
136mA
Manufacturer'S Part No.
IRF6612TRPBF

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IRF6612TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF6612TRPBF?

IRF6612TRPBF is listed with package reference -. The current product description is MOSFET N-CH 30V 24A DIRECTFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 86710 units in stock and 86067 units available for IRF6612TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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