Supply original IRF6620TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 20V 27A DIRECTFET

RoHS
Datasheet
Supply original IRF6620TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF6620TRPBF

Internal code

TCE000056514

Package

-

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 20V 27A DIRECTFET

key Attributes

-

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Product overview

Overview

MOSFET N-CH 20V 27A DIRECTFET

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2006

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Current Rating
27A
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Operating Temperature
-40°C~150°C TJ
Pulsed Drain Current-Max (IDM)
220A
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
5
Gate To Source Voltage (Vgs)
20V
Terminal Position
BOTTOM
Number Of Terminations
3
Length
6.35mm
Voltage - Rated DC
20V
Drain To Source Breakdown Voltage
20V
Continuous Drain Current (ID)
22A
Width
5.05mm
Power Dissipation
89W
Drain-Source On Resistance-Max
0.0027Ohm
Additional Feature
LOW CONDUCTION LOSS
Vgs(Th) (Max) @ Id
2.45V @ 250μA
Avalanche Energy Rating (Eas)
39 mJ
Package / Case
DirectFET™ Isometric MX
Power Dissipation-Max
2.8W Ta 89W Tc
Nominal Vgs
2.45 V
Rds On (Max) @ Id, Vgs
2.7m Ω @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs
42nC @ 4.5V
Height
506μm
Current - Continuous Drain (Id) @ 25°C
27A Ta 150A Tc
Manufacturer'S Part No.
IRF6620TRPBF
Fall Time (Typ)
6.6 ns
Input Capacitance (Ciss) (Max) @ Vds
4130pF @ 10V
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Turn-Off Delay Time
20 ns
Turn On Delay Time
18 ns
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
80ns
RoHS Status
RoHS non-compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
3 (168 Hours)
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-XBCC-N3

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What is IRF6620TRPBF?

IRF6620TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF6620TRPBF?

IRF6620TRPBF is listed with package reference -. The current product description is MOSFET N-CH 20V 27A DIRECTFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF6620TRPBF available in stock?

This page currently shows 43768 units in stock and 33000 units available for IRF6620TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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