Supply original IRF1018ESTRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 60V 79A D2PAK

RoHS
Datasheet
Supply original IRF1018ESTRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF1018ESTRLPBF

Internal code

TCE000056511

Package

TO-263-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 60V 79A D2PAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 60V 79A D2PAK

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Turn On Delay Time
13 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
35ns
Turn-Off Delay Time
55 ns
Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation
110W
Power Dissipation-Max
110W Tc
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Terminal Position
SINGLE
Number Of Terminations
2
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Width
9.65mm
Height
4.826mm
Threshold Voltage
4V
Fall Time (Typ)
46 ns
Length
10.668mm
Continuous Drain Current (ID)
79A
Vgs(Th) (Max) @ Id
4V @ 100μA
Gate Charge (Qg) (Max) @ Vgs
69nC @ 10V
Avalanche Energy Rating (Eas)
88 mJ
Input Capacitance (Ciss) (Max) @ Vds
2290pF @ 50V
Rds On (Max) @ Id, Vgs
8.4m Ω @ 47A, 10V
Resistance
8.4MOhm
Manufacturer'S Part No.
IRF1018ESTRLPBF
Current - Continuous Drain (Id) @ 25°C
79A Tc

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What is IRF1018ESTRLPBF?

IRF1018ESTRLPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF1018ESTRLPBF?

IRF1018ESTRLPBF is listed with package reference TO-263-3. The current product description is MOSFET N-CH 60V 79A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF1018ESTRLPBF available in stock?

This page currently shows 65405 units in stock and 37248 units available for IRF1018ESTRLPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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