Supply original FDD8N50NZTM, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 500V 6.5A DPAK

RoHS
Datasheet
Supply original FDD8N50NZTM, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

FDD8N50NZTM

Internal code

TCE000056394

Package

TO-252-3

Manufacturer

ON Semiconductor

Key specifications

Serise

UniFET-II™

Min Quantity

1

Description

MOSFET N-CH 500V 6.5A DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 500V 6.5A DPAK

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

Rise Time

34ns

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

17 ns

Product Parameter

Turn-Off Delay Time

43 ns

Product Parameter

Drain To Source Voltage (Vdss)

500V

Terminal Finish
Tin (Sn)
Rise Time
34ns
Number Of Elements
1
Turn On Delay Time
17 ns
Turn-Off Delay Time
43 ns
Drain To Source Voltage (Vdss)
500V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Published
2004
Factory Lead Time
6 Weeks
Packaging
Tape & Reel (TR)
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
ON Semiconductor
Height
2.39mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Additional Feature
ESD PROTECTED
Operating Temperature
-55°C~150°C TJ
Length
6.73mm
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs(Th) (Max) @ Id
5V @ 250μA
Gate To Source Voltage (Vgs)
25V
Vgs (Max)
±25V
Fall Time (Typ)
27 ns
Weight
260.37mg
Current - Continuous Drain (Id) @ 25°C
6.5A Tc
Pulsed Drain Current-Max (IDM)
26A
Continuous Drain Current (ID)
6.5A
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Power Dissipation
90W
Power Dissipation-Max
90W Tc
DS Breakdown Voltage-Min
500V
Series
UniFET-II™
Drain-Source On Resistance-Max
0.85Ohm
Avalanche Energy Rating (Eas)
287 mJ
Input Capacitance (Ciss) (Max) @ Vds
735pF @ 25V
Manufacturer'S Part No.
FDD8N50NZTM
Rds On (Max) @ Id, Vgs
850m Ω @ 3.25A, 10V

Common questions

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Quick answers for buyers reviewing FDD8N50NZTM, stock, documentation, and sourcing steps.

What is FDD8N50NZTM?

FDD8N50NZTM is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDD8N50NZTM?

FDD8N50NZTM is listed with package reference TO-252-3. The current product description is MOSFET N-CH 500V 6.5A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDD8N50NZTM available in stock?

This page currently shows 40945 units in stock and 13033 units available for FDD8N50NZTM. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDD8N50NZTM by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDD8N50NZTM?

Yes. This page links to the datasheet for FDD8N50NZTM by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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