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NTR4101PT1G Transistors - FETs, MOSFETs - Single by ON Semiconductor
NTR4101PT1G is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT-23 under the ON Semiconductor brand listing. MOSFET P-CH 20V 1.8A SOT-23. TrustCompo combines the available model, brand, hierarchy, and specification details around NTR4101PT1G so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
-
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 20V 1.8A SOT-23
key Attributes
-
Datasheet
View NTR4101PT1G DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
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ISO 14001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The NTR4101PT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.
Key Features:
- Type: N-channel MOSFET
- Package: The NTR4101PT1G is typically housed in a compact SOT-23 package, which is suitable for surface-mount technology (SMT). This package design allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
- Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of approximately 3.5A, which allows it to drive moderate loads effectively.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency during operation.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 1V to 2.5V, which means it can be turned on with relatively low gate voltage, making it compatible with various control signals.
- Switching Speed: The NTR4101PT1G features fast switching capabilities, which is essential for applications requiring rapid on/off control, such as in power supplies and motor drivers.
- Thermal Characteristics: The device has a thermal resistance (RθJA) that allows for effective heat dissipation, ensuring reliable operation under load.
Applications:
The NTR4101PT1G is suitable for a wide range of applications, including:
- Power management circuits
- Load switching
- Motor control
- DC-DC converters
- Battery management systems
- LED drivers
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): Typically around 1.5W, depending on the thermal conditions.
- Body Diode Characteristics: The device includes an intrinsic body diode, which can conduct in the reverse direction, making it useful in applications where reverse current flow is expected.
Conclusion:
The NTR4101PT1G from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for various electronic applications requiring reliable switching and power management. Its compact size, low on-resistance, and fast switching capabilities make it an excellent choice for modern electronic designs.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
Published
2008
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Lead Free
Lead Free
Product Attribute
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
ON Semiconductor
Power Dissipation
730mW
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Package / Case
TO-236-3, SC-59, SOT-23-3
Height
940μm
Surface Mount
YES
Contact Plating
Tin
Radiation Hardening
No
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Length
2.9mm
Vgs (Max)
±8V
Voltage - Rated DC
-20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Gate To Source Voltage (Vgs)
8V
Drain To Source Breakdown Voltage
-20V
Number Of Terminations
3
Width
1.3mm
Resistance
70mOhm
Vgs(Th) (Max) @ Id
1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C
1.8A Ta
Power Dissipation-Max
420mW Ta
Gate Charge (Qg) (Max) @ Vgs
8.5nC @ 4.5V
Fall Time (Typ)
12.6 ns
Manufacturer'S Part No.
NTR4101PT1G
Rds On (Max) @ Id, Vgs
85m Ω @ 1.6A, 4.5V
Current Rating
-3.2A
Continuous Drain Current (ID)
-3.2A
Threshold Voltage
-720mV
Input Capacitance (Ciss) (Max) @ Vds
675pF @ 10V
Nominal Vgs
-720 mV
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99
Moisture Sensitivity Level (MSL)
Not Applicable
Number Of Elements
1
Drain To Source Voltage (Vdss)
20V
Turn On Delay Time
7.5 ns
Rise Time
12.6ns
Turn-Off Delay Time
30.2 ns
Common questions
Product FAQ
Quick answers for buyers reviewing NTR4101PT1G, stock, documentation, and sourcing steps.
What is NTR4101PT1G?
NTR4101PT1G is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for NTR4101PT1G?
NTR4101PT1G is listed with package reference SOT-23. The current product description is MOSFET P-CH 20V 1.8A SOT-23, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is NTR4101PT1G available in stock?
This page currently shows 162453 units in stock and 50027 units available for NTR4101PT1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for NTR4101PT1G?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for NTR4101PT1G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for NTR4101PT1G?
Yes. This page links to the datasheet for NTR4101PT1G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify NTR4101PT1G before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for NTR4101PT1G before approving the order.
Transistors - FETs, MOSFETs - Single
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