Supply original BSC014N06NSATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 60V 30A TDSON-8

RoHS
Datasheet
Supply original BSC014N06NSATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

BSC014N06NSATMA1

Internal code

TCE000055768

Package

-

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 60V 30A TDSON-8

key Attributes

-

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Product overview

Overview

MOSFET N-CH 60V 30A TDSON-8

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Turn On Delay Time

23 ns

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Configuration

SINGLE WITH BUILT-IN DIODE

Product Parameter

Rise Time

10ns

Product Parameter

Turn-Off Delay Time

43 ns

Turn On Delay Time
23 ns
Number Of Channels
1
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
10ns
Turn-Off Delay Time
43 ns
Max Dual Supply Voltage
60V
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Factory Lead Time
13 Weeks
Published
1997
Halogen Free
Halogen Free
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Reach Compliance Code
not_compliant
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM)
400A
Package / Case
8-PowerTDFN
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Pbfree Code
no
Contact Plating
Tin
Mount
Surface Mount
Number Of Pins
8
Terminal Form
FLAT
Drain To Source Breakdown Voltage
60V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Number Of Terminations
3
Continuous Drain Current (ID)
100A
Fall Time (Typ)
11 ns
Series
OptiMOS™
Threshold Voltage
2.8V
Gate Charge (Qg) (Max) @ Vgs
89nC @ 10V
Power Dissipation
156W
Power Dissipation-Max
2.5W Ta 156W Tc
Drain Current-Max (Abs) (ID)
30A
Current - Continuous Drain (Id) @ 25°C
30A Ta 100A Tc
Vgs(Th) (Max) @ Id
2.8V @ 120μA
Rds On (Max) @ Id, Vgs
1.45m Ω @ 50A, 10V
Manufacturer'S Part No.
BSC014N06NSATMA1
Input Capacitance (Ciss) (Max) @ Vds
6500pF @ 30V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F3

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BSC014N06NSATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

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BSC014N06NSATMA1 is listed with package reference -. The current product description is MOSFET N-CH 60V 30A TDSON-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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