Supply original AUIRFR2905Z, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 55V 42A DPAK

RoHS
Datasheet
Supply original AUIRFR2905Z, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

AUIRFR2905Z

Internal code

TCE000055560

Package

TO-252-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 55V 42A DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 55V 42A DPAK

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Detailed Specifications

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Product Parameter

Rise Time

66ns

Product Parameter

Turn-Off Delay Time

31 ns

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

14 ns

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Rise Time
66ns
Turn-Off Delay Time
31 ns
Number Of Elements
1
Turn On Delay Time
14 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Packaging
Tube
Mounting Type
Surface Mount
Published
2003
Factory Lead Time
26 Weeks
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Height
2.39mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Power Dissipation
110W
Power Dissipation-Max
110W Tc
Continuous Drain Current (ID)
59A
Pulsed Drain Current-Max (IDM)
240A
Current - Continuous Drain (Id) @ 25°C
42A Tc
Length
6.73mm
Drain Current-Max (Abs) (ID)
42A
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Drain To Source Breakdown Voltage
55V
Threshold Voltage
2V
Fall Time (Typ)
35 ns
Input Capacitance (Ciss) (Max) @ Vds
1380pF @ 25V
Rds On (Max) @ Id, Vgs
14.5m Ω @ 36A, 10V
Avalanche Energy Rating (Eas)
55 mJ
Additional Feature
AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Manufacturer'S Part No.
AUIRFR2905Z

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What is AUIRFR2905Z?

AUIRFR2905Z is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for AUIRFR2905Z?

AUIRFR2905Z is listed with package reference TO-252-3. The current product description is MOSFET N-CH 55V 42A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is AUIRFR2905Z available in stock?

This page currently shows 50552 units in stock and 50552 units available for AUIRFR2905Z. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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