Supply original AUIRFR1018E, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 60V 79A DPAK

RoHS
Datasheet
Supply original AUIRFR1018E, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

AUIRFR1018E

Internal code

TCE000055559

Package

TO-252-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 60V 79A DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 60V 79A DPAK

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Packaging

Tube

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2011

Product Attribute

Part Status

Discontinued

REACH Status
REACH Unaffected
ECCN
EAR99
Packaging
Tube
Mounting Type
Surface Mount
Published
2011
Part Status
Discontinued
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Height
2.39mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Power Dissipation
110W
Power Dissipation-Max
110W Tc
Length
6.73mm
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
46 ns
Threshold Voltage
2V
Vgs(Th) (Max) @ Id
4V @ 100μA
Additional Feature
ULTRA-LOW RESISTANCE
Current - Continuous Drain (Id) @ 25°C
56A Tc
Continuous Drain Current (ID)
56A
Gate Charge (Qg) (Max) @ Vgs
69nC @ 10V
Avalanche Energy Rating (Eas)
88 mJ
Input Capacitance (Ciss) (Max) @ Vds
2290pF @ 50V
Rds On (Max) @ Id, Vgs
8.4m Ω @ 47A, 10V
Drain-Source On Resistance-Max
0.0084Ohm
Manufacturer'S Part No.
AUIRFR1018E
Base Part Number
AUIRFR1018E
Drain Current-Max (Abs) (ID)
79A
Turn On Delay Time
13 ns
Number Of Elements
1
Rise Time
35ns
Turn-Off Delay Time
55 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is AUIRFR1018E?

AUIRFR1018E is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for AUIRFR1018E?

AUIRFR1018E is listed with package reference TO-252-3. The current product description is MOSFET N-CH 60V 79A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is AUIRFR1018E available in stock?

This page currently shows 51789 units in stock and 47744 units available for AUIRFR1018E. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for AUIRFR1018E by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for AUIRFR1018E?

Yes. This page links to the datasheet for AUIRFR1018E by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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