Supply original IRLS3036PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 60V 195A D2-PAK

RoHS
Datasheet
Supply original IRLS3036PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRLS3036PBF

Internal code

TCE000055112

Package

TO-263-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 60V 195A D2-PAK

key Attributes

-

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Overview

MOSFET N-CH 60V 195A D2-PAK

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Termination
SMD/SMT
Part Status
Discontinued
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Length
10.67mm
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs (Max)
±16V
Avalanche Energy Rating (Eas)
290 mJ
Vgs(Th) (Max) @ Id
2.5V @ 250μA
Nominal Vgs
2.5 V
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Drain To Source Breakdown Voltage
60V
Height
4.83mm
Width
9.65mm
Gate To Source Voltage (Vgs)
16V
Threshold Voltage
2.5V
Fall Time (Typ)
110 ns
Gate Charge (Qg) (Max) @ Vgs
140nC @ 4.5V
Power Dissipation
380W
Power Dissipation-Max
380W Tc
Continuous Drain Current (ID)
270A
Current - Continuous Drain (Id) @ 25°C
195A Tc
Input Capacitance (Ciss) (Max) @ Vds
11210pF @ 50V
Rds On (Max) @ Id, Vgs
2.4m Ω @ 165A, 10V
Resistance
2.4MOhm
Manufacturer'S Part No.
IRLS3036PBF
Turn-Off Delay Time
110 ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Dual Supply Voltage
60V
Rise Time
220ns
Turn On Delay Time
66 ns

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What is IRLS3036PBF?

IRLS3036PBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRLS3036PBF?

IRLS3036PBF is listed with package reference TO-263-3. The current product description is MOSFET N-CH 60V 195A D2-PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRLS3036PBF available in stock?

This page currently shows 22790 units in stock and 17274 units available for IRLS3036PBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for IRLS3036PBF?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRLS3036PBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IRLS3036PBF?

Yes. This page links to the datasheet for IRLS3036PBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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